Conventional computers operate deterministically using strings of zeros and ones called bits
to represent information in binary code. Despite the evolution of conventional computers into …

Magnetic tunnel junction (MTJ), a spintronics device, has been intensively developed in the
past couple of decades because of its high potential in terms of non-volatility, fast operation …

Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements
is critical for future electronics with spin-transfer torque magnetoresistive random access …

Modulation of the energy landscape by external perturbations governs various thermally-
activated phenomena, described by the Arrhenius law. Thermal fluctuation of nanoscale …

This work discusses the proposal of a spintronic neuromorphic system with spin orbit torque-
driven domain wall motion (DWM)-based neurons and synapses. We propose a voltage …

In terms of practical applications, a performance bottleneck with spin-transfer-torque
magnetic random-access memory (STT-MRAM) devices is evident at varying temperatures …

D0 19-Mn 3 Sn, an antiferromagnet having a non-collinear spin structure in a kagome lattice,
has attracted great attention owing to various intriguing properties such as large anomalous …

We have proposed a novel quad-interface magnetic tunnel junction (MTJ) technology which
brings forth an increase of both thermal stability factor Δ and switching efficiency defined as …

Shape-anisotropy magnetic tunnel junctions (MTJs) are attracting much attention as a high-
performance nonvolatile spintronic device in the X/1X nm regime. In this study, we …

Current induced magnetization switching in CoFeB/MgO-based magnetic tunnel junctions
(MTJs) with a perpendicular easy axis is studied above room temperature. The intrinsic …