Ultrawide bandgap (UWBG) semiconductors, including Ga2O3, diamond, Al x Ga1–x N/AlN,
featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet …

Biaxially oriented polypropylene (BOPP) is one of the most commonly used commercial
capacitor films, but its upper operating temperature is below 105° C due to the sharply …

Aluminum nitride (AlN), distinguished by exceptional mechanical, optical, and electronic
properties, has found extensive applications in diverse domains, including heat dissipation …

Aluminum scandium nitride (Al 1–x Sc x N) with attractive ferroelectric and piezoelectric
properties is a promising material for next-generation device applications. However, the …

Aluminum nitride (AlN) films suffer from poor piezoelectric response due to the local
hexagonal symmetry of wurtzite crystal structure. The fundamental mechanism of improving …

The growth of highly crystalline c-plane AlN‹ 002› is extremely difficult, entailing high
temperature and ultra-high vacuum condition. In sputtering technique, the addition of …

As a kind of important strategic resource, molybdenum (Mo) and its alloys are widely applied
in solar cells and 5G radio frequency filters. In order to improve the yield of industrial …

Wurtzite aluminum nitride (AlN) films with (1 0 0) and (0 0 2) preferred orientations are
obtained on Si (1 0 0) wafers by radio frequency magnetron sputtering. The effects of target …

Sputtered Cu/Si thin films were experimentally prepared at different sputtering pressures
and characterized using X-ray diffraction (XRD) and an atomic force microscope (AFM) …

Thin film bulk acoustic resonator (FBAR) with high quality factor (Q) is preferred for many
communication applications. AlN film deposited in conventional FBAR fabrication process is …