This paper reviews the state of emerging transistor technologies capable of terahertz
amplification, as well as the state of transistor modeling as required in terahertz electronic …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

This paper presents Si/SiGe: C and InP/GaAsSb HBTs which feature specific assets to
address submillimeter-wave and THz applications. Process and modeling status and …

Compact Hierarchical Bipolar Transistor Modeling with HiCUM will be of great practical
benefit to professionals from the process development, modeling and circuit design …

An analytical large-signal HBT model which accurately accounts for the intricate bias
dependence of collector delay in devices fabricated in both GaAs and InP material systems …

Many applications require circuits to be operated close to the performance limits of current
silicon (production) processes to meet the required circuit specifications for, eg, high speed …

Push-push design has proven to be an efficient way to extend the usable frequency range of
active devices for oscillator applications. In this paper, the basic principles of push-push …

Terahertz (THz) silicon-based electronics is undergoing rapid developments. In order to
keep this momentum high, an accurate and optimized on-wafer characterization procedure …

Mextram 504 is the new version of the Philips compact model for bipolar transistors. This
document contains the derivation of all the equations that are part of the model. This …

A compact bipolar transistor model is presented that combines the simplicity of the SPICE
Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called …