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Diamond-like amorphous carbon
J Robertson - Materials science and engineering: R: Reports, 2002 - Elsevier
Diamond-like carbon (DLC) is a metastable form of amorphous carbon with significant sp3
bonding. DLC is a semiconductor with a high mechanical hardness, chemical inertness, and …
bonding. DLC is a semiconductor with a high mechanical hardness, chemical inertness, and …
Conjugated polymer-based organic solar cells
The need to develop inexpensive renewable energy sources stimulates scientific research
for efficient, low-cost photovoltaic devices. 1 The organic, polymer-based photovoltaic …
for efficient, low-cost photovoltaic devices. 1 The organic, polymer-based photovoltaic …
Luminescence and recombination in hydrogenated amorphous silicon
RA Street - Advances in physics, 1981 - Taylor & Francis
Luminescence and related investigations of recombination in hydrogenated amorphous
silicon prepared by glow discharge and sputtering are described. Emphasis is given to a …
silicon prepared by glow discharge and sputtering are described. Emphasis is given to a …
The applicability of the transport-energy concept to various disordered materials
SD Baranovskii, T Faber, F Hensel… - Journal of Physics …, 1997 - iopscience.iop.org
It is known that in disordered semiconductors with purely exponential energy distribution of
localized band-tail states, as in amorphous semiconductors, all transport phenomena at low …
localized band-tail states, as in amorphous semiconductors, all transport phenomena at low …
Half-century of Efros–Shklovskii Coulomb gap: Romance with Coulomb interaction and disorder
BI Shklovskii - Low Temperature Physics, 2024 - pubs.aip.org
The Efros–Shklovskii (ES) Coulomb gap in the one-electron density of localized states and
the ES law of the variable range hop** conductivity were coined 50 years ago. The theory …
the ES law of the variable range hop** conductivity were coined 50 years ago. The theory …
Dispersive and steady-state recombination in organic disordered semiconductors
Charge carrier recombination in organic disordered semiconductors is strongly influenced
by the thermalization of charge carriers in the density of states (DOS). Measurements of …
by the thermalization of charge carriers in the density of states (DOS). Measurements of …
and spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
A study of donor electron spins and spin-dependent electronic transitions involving
phosphorous (P 31) atoms in proximity to the (111) oriented crystalline silicon (c-Si) to …
phosphorous (P 31) atoms in proximity to the (111) oriented crystalline silicon (c-Si) to …
The concept of transport energy and its application to steady-state photoconductivity in amorphous silicon
SD Baranovskii, P Thomas, GJ Adriaenssens - Journal of non-crystalline …, 1995 - Elsevier
A particular energy level in the band tail of a disordered semiconductor, called the 'transport
energy', plays a crucial role in hop** transport of carriers in both equilibrium and non …
energy', plays a crucial role in hop** transport of carriers in both equilibrium and non …
Photo-induced creation of metastable defects in a-Si: H at low temperatures and their effect on the photoconductivity
P Stradins, H Fritzsche - Philosophical Magazine B, 1994 - Taylor & Francis
Using undoped hydrogenated amorphous silicon (a-Si: H) containing ND= 6.7× 1015cm-3
native dangling bond (DB) defects we found that metastable DB defects can be created with …
native dangling bond (DB) defects we found that metastable DB defects can be created with …
Charge transport in disordered materials
This chapter surveys general theoretical concepts developed to qualitatively understand and
to quantitatively describe the electrical conduction properties of disordered organic and …
to quantitatively describe the electrical conduction properties of disordered organic and …