Using a semiempirical rule based on a range of existing hard materials, Liu and Cohen
predicted that some of the crystalline forms of C3N4 might have values of bulk modulus …

Thin CNx films were deposited by combination of KrF pulse laser deposition with additional
radio frequency discharge (13.56 MHz). Nitrogen pressure was changed from 1 to 40 Pa …

We report the characteristics revealed through optical investigations (microscopic studies,
optical and IR transmission) of the thin films deposited by multipulse UV reactive laser …

Carbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser
(wavelength 248 nm, duration 23 ns) ablation of graphite with assistance of nitrogen ion …

Carbon nitride thin films were deposited using an ArF excimer laser to ablate a target of 3, 5
diamino 1, 2, 4 triazole (guanazole) in a reactive atmosphere of ammonia. Films were …

Carbon nitride (CNx films have been prepared by UV (at 248 nm) laser-induced chemical
vapor deposition using different materials (alumina, laser-activated alumina, pre-deposited …

Thin CNx films have been deposited on silicon substrates by inductively coupled plasma
chemical vapour deposition (ICP-CVD) and by laser-induced chemical vapour deposition …

The carbon nitride (CNx) films have been prepared by infrared (IR; at 10.6 μm) and
ultraviolet (at 248 nm) laser induced chemical vapour deposition (CVD) using different …

A study on the modification of the physicochemical properties of the carbon–nitrogen
compounds when submitted to a thermal annealing process is reported. Original films were …

¬-C3N4 layers can be deposited on many substrates. A standard experimental set-up
comprises a pulsed KrF excimer laser (wavelength 248 nm, duration~ 30 ns) that is used to …