Electrostatic gating and intercalation in 2D materials

Y Wu, D Li, CL Wu, HY Hwang, Y Cui - Nature Reviews Materials, 2023‏ - nature.com
The do** or the alteration of crystals with guest species to obtain desired properties has
long been a research frontier in materials science. However, the closely packed lattice …

Transport in two-dimensional topological materials: recent developments in experiment and theory

D Culcer, AC Keser, Y Li, G Tkachov - 2D Materials, 2020‏ - iopscience.iop.org
We review theoretical and experimental highlights in transport in two-dimensional
topological materials over the last five years. Topological materials comprise topological …

Bulk and boundary invariants for complex topological insulators

E Prodan, H Schulz-Baldes - K, 2016‏ - Springer
Topological insulators are crystalline solids with supposedly very special properties. If
stumbling upon such a crystal, which is possible because topological insulators are known …

Map** propagation of collective modes in Bi2Se3 and Bi2Te2.2Se0.8 topological insulators by near-field terahertz nanoscopy

EAA Pogna, L Viti, A Politano, M Brambilla… - Nature …, 2021‏ - nature.com
Near-field microscopy discloses a peculiar potential to explore novel quantum state of matter
at the nanoscale, providing an intriguing playground to investigate, locally, carrier dynamics …

Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

S Gautam, V Aggarwal, B Singh, VPS Awana… - Scientific Reports, 2022‏ - nature.com
We report a low-temperature magneto transport study of Bi2Se3 thin films of different
thicknesses (40, 80 and 160 nm), deposited on sapphire (0001) substrates, using radio …

Stoichiometry‐Induced Ferromagnetism in Altermagnetic Candidate MnTe

M Chilcote, AR Mazza, Q Lu, I Gray… - Advanced Functional …, 2024‏ - Wiley Online Library
The field of spintronics has seen a surge of interest in altermagnetism due to novel
predictions and many possible applications. MnTe is a leading altermagnetic candidate that …

Record surface state mobility and quantum Hall effect in topological insulator thin films via interface engineering

N Koirala, M Brahlek, M Salehi, L Wu, J Dai… - Nano …, 2015‏ - ACS Publications
Material defects remain as the main bottleneck to the progress of topological insulators (TIs).
In particular, efforts to achieve thin TI samples with dominant surface transport have always …

Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization

M Brahlek, N Koirala, N Bansal, S Oh - Solid State Communications, 2015‏ - Elsevier
We reanalyze some of the critical transport experiments and provide a coherent
understanding of the current generation of topological insulators (TIs). Currently TI transport …

Thickness-dependent transport channels in topological insulator Bi2Se3 thin films grown by magnetron sputtering

WJ Wang, KH Gao, ZQ Li - Scientific Reports, 2016‏ - nature.com
We study the low-temperature transport properties of Bi2Se3 thin films grown by magnetron
sputtering. A positive magnetoresistance resulting from the weak antilocalization (WAL) …

Plasmonics of topological insulators at optical frequencies

J Yin, HNS Krishnamoorthy, G Adamo… - NPG Asia …, 2017‏ - nature.com
The development of nanoplasmonic devices, such as plasmonic circuits and metamaterial
superlenses in the visible to ultraviolet frequency range, is hampered by the lack of low-loss …