Monolithic multi-bit weight cell for neuromorphic computing

BJ Obradovic, T Rakshit, JA Kittl, R Hatcher - US Patent 10,909,449, 2021‏ - Google Patents
2017-08-21 Assigned to SAMSUNG ELECTRONICS CO., LTD reassignment SAMSUNG
ELECTRONICS CO., LTD ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT …

Synaptic resistors for concurrent parallel signal processing, memory and learning with high speed and energy efficiency

Y Chen - US Patent 11,514,303, 2022‏ - Google Patents
Synaptic resistors (synstors), and their method of manufac ture and integration into
exemplary circuits are provided. Synstors are configured to emulate the analog signal pro …

Optical synapses

S Abel, BJ Offrein, A La Porta, P Stark - US Patent 11,562,221, 2023‏ - Google Patents
One aspect of the present disclosure provides an optical synapse comprising a memristive
device for non-volatile storage of a synaptic weight dependent on resistance of the device …

Modifying material parameters of a nanoscale device post-fabrication

I Giannopoulos, A Sebastian… - US Patent …, 2021‏ - Google Patents
Embodiments of the invention are directed to a method to modify material properties of a
functional material of a nanoscale device post-fabrication. The method includes per forming …

Drift and noise corrected memristive device

GS Syed, B Kersting, A Sebastian - US Patent 11,361,821, 2022‏ - Google Patents
(57) ABSTRACT A memristor memory device comprises a memristive memory cell, an input
terminal, an output terminal, and a gate terminal. The input terminal and the output terminal …

Multi-terminal neuromorphic device

GS Syed, A Sebastian, T Moraitis… - US Patent 11,397,544, 2022‏ - Google Patents
A neuromorphic memory element comprises a memristor, a plurality of the neuromorphic
memory elements and a method for operating the same may be provided. The memristor …

Neural network memory

M Boniardi, I Tortorelli - US Patent 11,922,056, 2024‏ - Google Patents
An example apparatus can include a memory array and a memory controller. The memory
array can include a first portion including a first plurality of memory cells. The memory array …

Artificial neuromorphic circuit and operation method

CH Lam, CS Chiu - US Patent 11,468,307, 2022‏ - Google Patents
Artificial neuromorphic circuit includes synapse circuit and post-neuron circuit. Synapse
circuit includes phase change element, first switch, and second switch. First switch is …

Artificial neuromorphic circuit and operation method

CH Lam, CS Chiu - US Patent 11,551,070, 2023‏ - Google Patents
Artificial neuromorphic circuit includes synapse and post neuron circuits. Synapse circuit
includes phase change ele ment, first switch having at least three terminals, and second …

Artificial neuromorphic circuit and operation method

CH Lam, CS Chiu - US Patent 11,580,370, 2023‏ - Google Patents
2020-06-14 Assigned to JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD., ALTO
MEMORY TECHNOLOGY CORPORATION reassignment JIANGSU ADVANCED MEMORY …