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Monolithic multi-bit weight cell for neuromorphic computing
2017-08-21 Assigned to SAMSUNG ELECTRONICS CO., LTD reassignment SAMSUNG
ELECTRONICS CO., LTD ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT …
ELECTRONICS CO., LTD ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT …
Synaptic resistors for concurrent parallel signal processing, memory and learning with high speed and energy efficiency
Y Chen - US Patent 11,514,303, 2022 - Google Patents
Synaptic resistors (synstors), and their method of manufac ture and integration into
exemplary circuits are provided. Synstors are configured to emulate the analog signal pro …
exemplary circuits are provided. Synstors are configured to emulate the analog signal pro …
Optical synapses
One aspect of the present disclosure provides an optical synapse comprising a memristive
device for non-volatile storage of a synaptic weight dependent on resistance of the device …
device for non-volatile storage of a synaptic weight dependent on resistance of the device …
Modifying material parameters of a nanoscale device post-fabrication
Embodiments of the invention are directed to a method to modify material properties of a
functional material of a nanoscale device post-fabrication. The method includes per forming …
functional material of a nanoscale device post-fabrication. The method includes per forming …
Drift and noise corrected memristive device
(57) ABSTRACT A memristor memory device comprises a memristive memory cell, an input
terminal, an output terminal, and a gate terminal. The input terminal and the output terminal …
terminal, an output terminal, and a gate terminal. The input terminal and the output terminal …
Multi-terminal neuromorphic device
A neuromorphic memory element comprises a memristor, a plurality of the neuromorphic
memory elements and a method for operating the same may be provided. The memristor …
memory elements and a method for operating the same may be provided. The memristor …
Neural network memory
An example apparatus can include a memory array and a memory controller. The memory
array can include a first portion including a first plurality of memory cells. The memory array …
array can include a first portion including a first plurality of memory cells. The memory array …
Artificial neuromorphic circuit and operation method
CH Lam, CS Chiu - US Patent 11,468,307, 2022 - Google Patents
Artificial neuromorphic circuit includes synapse circuit and post-neuron circuit. Synapse
circuit includes phase change element, first switch, and second switch. First switch is …
circuit includes phase change element, first switch, and second switch. First switch is …
Artificial neuromorphic circuit and operation method
CH Lam, CS Chiu - US Patent 11,551,070, 2023 - Google Patents
Artificial neuromorphic circuit includes synapse and post neuron circuits. Synapse circuit
includes phase change ele ment, first switch having at least three terminals, and second …
includes phase change ele ment, first switch having at least three terminals, and second …
Artificial neuromorphic circuit and operation method
CH Lam, CS Chiu - US Patent 11,580,370, 2023 - Google Patents
2020-06-14 Assigned to JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD., ALTO
MEMORY TECHNOLOGY CORPORATION reassignment JIANGSU ADVANCED MEMORY …
MEMORY TECHNOLOGY CORPORATION reassignment JIANGSU ADVANCED MEMORY …