Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
2D materials bridging experiments and computations for electro/photocatalysis
The exploration of catalysts for energy conversion lies at the center of sustainable
development. The combination of experimental and computational approaches can provide …
development. The combination of experimental and computational approaches can provide …
Pentagon-based 2D materials: Classification, properties and applications
Y Shen, Q Wang - Physics Reports, 2022 - Elsevier
Abstract Since penta-graphene (PG), a two-dimensional (2D) carbon allotrope exclusively
composed of five-membered rings, was proposed in 2015, a great deal of effort has been …
composed of five-membered rings, was proposed in 2015, a great deal of effort has been …
[HTML][HTML] SnSe/SnS: multifunctions beyond thermoelectricity
Miniaturization, lightweight and highly integration have gradually become the main trends in
the development of modern science and technology. Two-dimensional (2D) SnSe/SnS …
the development of modern science and technology. Two-dimensional (2D) SnSe/SnS …
[HTML][HTML] MA2Z4 family heterostructures: Promises and prospects
Recent experimental synthesis of ambient-stable MoSi 2 N 4 monolayer has garnered
enormous research interest. The intercalation morphology of MoSi 2 N 4—composed of a …
enormous research interest. The intercalation morphology of MoSi 2 N 4—composed of a …
Group-IV (A) Janus dichalcogenide monolayers and their interfaces straddle gigantic shear and in-plane piezoelectricity
Inversion symmetry in the 1T-phase of pristine dichalcogenide monolayer MX2 (M= Ge, Sn;
X= S, Se) is broken in their Janus structures, MXY (M= Ge, Sn; X≠ Y= S, Se), which induces …
X= S, Se) is broken in their Janus structures, MXY (M= Ge, Sn; X≠ Y= S, Se), which induces …
A comprehensive study on carrier mobility and artificial photosynthetic properties in group VI B transition metal dichalcogenide monolayers
2D semiconducting transition-metal-dichalcogenides (TMDCs) have drawn a surge of
research interests in ultra-thin nanoelectronics and optoelectronics, owing to their moderate …
research interests in ultra-thin nanoelectronics and optoelectronics, owing to their moderate …
Enhanced high-temperature thermoelectric performance by strain engineering in BiOCl
Semiconductor BiOCl has a layered structure with ultralow lattice thermal conductivity [QD
Gibson et al., Science 373, 1017–1022 (2021)] and has potential applications in the field of …
Gibson et al., Science 373, 1017–1022 (2021)] and has potential applications in the field of …
Catalytic conversion of CO 2 to chemicals and fuels: the collective thermocatalytic/photocatalytic/electrocatalytic approach with graphitic carbon nitride
Rapid industrial development and the excessive use of fossil fuels have produced a
significantly large volume of CO2 in the atmosphere. The efficient conversion of CO2 to …
significantly large volume of CO2 in the atmosphere. The efficient conversion of CO2 to …
Correlation between strain tunable piezoelectricity and Rashba effect in flexible Janus Ga2Ge2XY (X, Y= S, Se, and Te) monolayers with high carrier mobility
Broken inversion symmetry in Janus structures leads to superior physical properties due to
the emergence of a non-zero dipole moment. Ga 2 Ge 2 XY (X, Y= S, Se, Te) monolayers …
the emergence of a non-zero dipole moment. Ga 2 Ge 2 XY (X, Y= S, Se, Te) monolayers …