Design for manufacturability and reliability in extreme-scaling VLSI

B Yu, X Xu, S Roy, Y Lin, J Ou, DZ Pan - Science China Information …, 2016 - Springer
In the last five decades, the number of transistors on a chip has increased exponentially in
accordance with the Moore's law, and the semiconductor industry has followed this law as …

ABCDPlace: Accelerated batch-based concurrent detailed placement on multithreaded CPUs and GPUs

Y Lin, W Li, J Gu, H Ren, B Khailany… - IEEE transactions on …, 2020 - ieeexplore.ieee.org
Placement is an important step in modern verylarge-scale integrated (VLSI) designs.
Detailed placement is a placement refining procedure intensively called throughout the …

MrDP: Multiple-row detailed placement of heterogeneous-sized cells for advanced nodes

Y Lin, B Yu, X Xu, JR Gao… - … on Computer-Aided …, 2017 - ieeexplore.ieee.org
As very large-scale integration technology shrinks to fewer tracks per standard cell, eg, from
10 to 7.5-track libraries (and lesser for 7 nm), there has been a rapid increase in the usage …

Device layer-aware analytical placement for analog circuits

B Xu, S Li, CW Pui, D Liu, L Shen, Y Lin, N Sun… - Proceedings of the …, 2019 - dl.acm.org
The layouts of analog/mixed-signal (AMS) integrated circuits (ICs) are dramatically different
from their digital counterparts. AMS circuit layouts usually include a variety of devices …

[ΒΙΒΛΙΟ][B] Timing performance of nanometer digital circuits under process variations

V Champac, JG Gervacio - 2018 - Springer
Integrated circuits are present in a diversity of electronic applications around us. We can find
them in a wide spectrum of consumer applications like smartphones, iPods, video games …

Enhanced optimal multi-row detailed placement for neighbor diffusion effect mitigation in sub-10 nm VLSI

C Han, AB Kahng, L Wang, B Xu - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Layout-dependent effect causes variation in device performance as well as mismatch in
model-hardware correlation in sub-10 nm nodes. In order to effectively explore the power …

Stitch aware detailed placement for multiple e-beam lithography

Y Lin, B Yu, Y Zou, Z Li, CJ Alpert, DZ Pan - Integration, 2017 - Elsevier
In multiple electron beam lithography (MEBL), a layout is split into stripes and the layout
patterns are cut by stripe boundaries, then all the stripes are printed in parallel. If a via …

Optimal multi-row detailed placement for yield and model-hardware correlation improvements in sub-10nm VLSI

C Han, K Han, AB Kahng, H Lee… - 2017 IEEE/ACM …, 2017 - ieeexplore.ieee.org
In sub-10nm, nodes, a change or step in diffusion height between adjacent standard cells
causes yield loss as well as a form of model-hardware miscorrelation called neighbor …

Modeling and detectability of full open gate defects in finfet technology

F Forero, H Villacorta, M Renovell… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
FinFET technology is an attractive candidate for high-performance and power-efficient
application and is currently used for several electronic products. FinFET technology …

Vertical M1 routing-aware detailed placement for congestion and wirelength reduction in sub-10nm nodes

P Debacker, K Han, AB Kahng, H Lee… - Proceedings of the 54th …, 2017 - dl.acm.org
Aggressive pitch scaling in sub-10nm nodes has introduced complex design rules which
make routing extremely challenging. Cell architectures have also been changed to meet the …