Coherent heterostructure mesh grown by gap-filling epitaxial chemical vapor deposition

In Situ Defect Engineering of Controllable Carrier Types in WSe2 for Homomaterial Inverters and Self-Powered Photodetectors

T Kang, Z Lu, L Liu, M Huang, Y Hu, H Liu, R Wu… - Nano Letters, 2023 - ACS Publications
WSe2 has a high mobility of electrons and holes, which is an ideal choice as active
channels of electronics in extensive fields. However, carrier-type tunability of WSe2 still has …
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Heteroatomic stitching of broken WS 2 monolayer with enhanced surface potential

D Thakur, Y Sato, V Balakrishnan - Nanoscale, 2023 - pubs.rsc.org
Sub-nanometre thick two-dimensional (2D) materials suffer from severe cracking during the
high temperature chemical vapour deposition growth process. The cracking can be utilised …
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