Deep learning interatomic potential for thermal and defect behaviour of aluminum nitride with quantum accuracy

T Li, Q Hou, J Cui, J Yang, B Xu, M Li, J Wang… - Computational Materials …, 2024 - Elsevier
Due to its exceptional physical properties, such as high thermal conductivity and mechanical
strength, AlN has been widely used in high-power, high-temperature electronic, and …

Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC

S Jiang, Y Li, Y Zhang, C Chen, Z Chen, W Zhu, H He… - RSC …, 2024 - pubs.rsc.org
Four-layer hexagonal silicon carbide (4H-SiC) is a promising material for high-temperature
and radiation-rich environments due to its excellent thermal conductivity and radiation …

[HTML][HTML] Molecular Dynamic Simulation of Primary Damage with Electronic Stop** in Indium Phosphide

Y Bai, W Liao, Z Chen, W Li, W Liu, H He, C He - Nanomaterials, 2024 - mdpi.com
Indium phosphide (InP) is an excellent material used in space electronic devices due to its
direct band gap, high electron mobility, and high radiation resistance. Displacement damage …

Threshold displacement energies and primary radiation damage in AlN from molecular dynamics simulations

S Anderson, M Khafizov, A Chernatynskiy - Nuclear Instruments and …, 2024 - Elsevier
Aluminum nitride (AlN) is an attractive material for sensing application in radiation
environments owing to its radiation resistance, optical wide-bandgap, and piezoelectric …

[HTML][HTML] Nuclear reactor radiation and temperature effects on piezoelectric surface acoustic wave devices

R Chesser, M Yazbeck, M Khafizov - … in Physics Research Section B: Beam …, 2024 - Elsevier
Surface acoustic wave (SAW) resonators were characterized in-situ in a nuclear reactor
environment at high-temperature. Devices based on lithium niobate (LiNbO 3), aluminum …