The basic results of the studies of defect–impurity interaction in implanted silicon are
presented. Factors affecting the way in which quasichemical reactions proceed—namely …

The structure and properties of the {001} planar platelet in diamond are investigated using
ab initio theory. We find that a carbonaceous model, based on a layer of self-interstitials …

Ионная имплантация является в настоящее время основным методом создания
легированных слоев полупроводников. Она обладает рядом неоспоримых …

This work is focusing on generation, time evolution, and impact on the electrical
performance of silicon diodes impaired by radiation induced active defects. n-type silicon …

This paper presents a comparative analysis of the structure and photoluminescence (PL) of
Si containing dislocations introduced by thermal shock or ion implantation. To study the …

The work is devoted to the study of defect formation processes in the near-surface layers of
silicon under thermal shock conditions and to the effect of preliminary exposure in a constant …

A comprehensive atomistic study of self-interstitial aggregation in crystalline silicon is
presented. Here, large-scale parallel molecular dynamics simulations are used to generate …

We present a detailed analysis of the point-defect clustering in strained S i/S i 1− x Ge
x/(001) Si structures, including the interaction of the point defects with the strained interfaces …

The dependences of photoluminescence (PL) and the structure of {113} defects induced in n‐
Cz‐Si (100) wafers by implantation of 350 keV O+ ions at a dose of 3.7× 1014 cm− 2 on the …

Theoretical studies of defect formation in semiconductor silicon play an important role in the
creation of breakthrough ideas for next-generation technologies. A brief comparative …