FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability
Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around
(GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two …
(GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two …
Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs
Four sources of variability, metal grain granularity (MGG), line-edge roughness (LER), gate-
edge roughness (GER), and random discrete dopants (RDD), affecting the performance of …
edge roughness (GER), and random discrete dopants (RDD), affecting the performance of …
A multi-method simulation toolbox to study performance and variability of nanowire FETs
An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been
developed to characterise the performance, scalability, and variability of state-of-the-art …
developed to characterise the performance, scalability, and variability of state-of-the-art …
Metal grain granularity study on a gate-all-around nanowire FET
The impact of the metal grain granularity (MGG) variations on subthreshold and ON-current
of a 22-nm gate length Si gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) …
of a 22-nm gate length Si gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) …
Impact of cross-sectional shape on 10-nm gate length InGaAs FinFET performance and variability
Three cross sections (rectangular, bullet shaped, and triangular), resulting from the
fabrication process, of nanoscale In 0.53 Ga 0.47 As-on-insulator FinFETs with a gate length …
fabrication process, of nanoscale In 0.53 Ga 0.47 As-on-insulator FinFETs with a gate length …
Internal photoemission metrology of inhomogeneous interface barriers
V Afanas' ev, N Kolomiiets, M Houssa… - physica status solidi …, 2018 - Wiley Online Library
Interfaces of heterogeneous solids, ranging from polycrystalline materials to composites, are
frequently encountered in nanotechnology. Electron transport in these materials and across …
frequently encountered in nanotechnology. Electron transport in these materials and across …
Fluctuation sensitivity map: A novel technique to characterise and predict device behaviour under metal grain work-function variability effects
A new technique developed for the analysis of intrinsic sources of variability affecting the
performance of semiconductor devices is presented. It is based on the creation of a …
performance of semiconductor devices is presented. It is based on the creation of a …
Stress-induced variability studies in tri-gate FinFETs with source/drain stressor at 7 nm technology nodes
The epitaxially grown SiGe source/drain stressor (e-SiGe) technique has emerged to be a
consistent performance booster for advanced devices below the 14 nm technology node. At …
consistent performance booster for advanced devices below the 14 nm technology node. At …
Work-function fluctuation of gate-all-around silicon nanowire n-MOSFETs: A unified comparison between cuboid and Voronoi methods
In this article, the work-function fluctuation (WKF) of nanosized metal grains is estimated and
compared with the cuboid and Voronoi methods for 10-nm-gate gate-all-around silicon …
compared with the cuboid and Voronoi methods for 10-nm-gate gate-all-around silicon …
Drift-diffusion versus Monte Carlo simulated ON-current variability in nanowire FETs
Variability of semiconductor devices is seriously limiting their performance at nanoscale. The
impact of variability can be accurately and effectively predicted by computer-aided …
impact of variability can be accurately and effectively predicted by computer-aided …