Mid-infrared integrated photonics on silicon: a perspective
The emergence of silicon photonics over the past two decades has established silicon as a
preferred substrate platform for photonic integration. While most silicon-based photonic …
preferred substrate platform for photonic integration. While most silicon-based photonic …
Photoconductive PbSe thin films for infrared imaging
Lead selenide (PbSe) emerged 70+ years ago for its unique photoconductive sensitivity to
the mid-wave infrared (MWIR) spectrum; however, new and exciting research continues to …
the mid-wave infrared (MWIR) spectrum; however, new and exciting research continues to …
Recent progress in GeSn growth and GeSn-based photonic devices
J Zheng, Z Liu, C Xue, C Li, Y Zuo… - Journal of …, 2018 - iopscience.iop.org
The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …
Improving carrier mobility of polycrystalline Ge by Sn do**
To improve the performance of electronic devices, extensive research efforts have recently
focused on the effect of incorporating Sn into Ge. In the present work, we investigate how Sn …
focused on the effect of incorporating Sn into Ge. In the present work, we investigate how Sn …
Monolithically integrated Ge-on-Si active photonics
J Liu - Photonics, 2014 - mdpi.com
Monolithically integrated, active photonic devices on Si are key components in Si-based
large-scale electronic-photonic integration for future generations of high-performance, low …
large-scale electronic-photonic integration for future generations of high-performance, low …
High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization
W Takeuchi, N Taoka, M Kurosawa… - Applied Physics …, 2015 - pubs.aip.org
We investigated the effects of incorporation of 0%–2% tin (Sn) into amorphous germanium
(Ge) on its crystallization behavior and electrical properties. Incorporation of only 0.2% Sn …
(Ge) on its crystallization behavior and electrical properties. Incorporation of only 0.2% Sn …
Junctionless poly-GeSn ferroelectric thin-film transistors with improved reliability by interface engineering for neuromorphic computing
CP Chou, YX Lin, YK Huang, CY Chan… - ACS applied materials …, 2019 - ACS Publications
Ferroelectric HfZrO x (Fe-HZO) with a larger remnant polarization (P r) is achieved by using
a poly-GeSn film as a channel material as compared with a poly-Ge film because of the …
a poly-GeSn film as a channel material as compared with a poly-Ge film because of the …
Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation
GeSn compounds have made many interesting contributions in photodetectors (PDs) over
the last ten years, as they have a detection limit in the NIR and mid-IR region. Sn …
the last ten years, as they have a detection limit in the NIR and mid-IR region. Sn …
70° C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge
K Toko, N Oya, N Saitoh, N Yoshizawa… - Applied Physics …, 2015 - pubs.aip.org
70 C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of
amorphous Ge | Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt …
amorphous Ge | Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt …
High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
We report the first demonstration of high-performance GeSn metal-semiconductor-metal
(MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET) on an advanced …
(MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET) on an advanced …