(57) ABSTRACT A surface acoustic wave (SAW) resonator device includes a semiconductor
substrate having a first surface and a second surface. The semiconductor substrate …

We propose in this letter a new passivation method to get rid of parasitic surface conduction
in oxidized high resistivity (HR) silicon and HR silicon-on-insulator (SOI) wafers. The method …

This work presents an acoustic platform using solidly mounted thin-oriented lithium niobate
(LiNbO3) film on silicon (Si). A thin layer of amorphous Si eliminates a conductive layer …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

The present disclosure relates to enhancing the thermal performance of encapsulated flip
chip dies. According to an exemplary process, a plurality of flip chip dies are attached on a …

We introduce in this work a new quality factor called effective resistivity (ρeff), which is used
to characterize and fairly compare the substrate resistivity of fully processed SOI wafers. The …

(57) ABSTRACT A semiconductor device and methods for manufacturing the same are
disclosed. The semiconductor device includes a polymer substrate and an interfacial layer …

A flip chip module having at least one flip chip die is disclosed. The flip chip module includes
a carrier having a top surface with a first mold compound residing on the top surface. A first …

A semiconductor device that does not produce nonlinearities attributed to a high resistivity
silicon handle interfaced with a dielectric region of a buried oxide (BOX) layer is disclosed …

This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the
same. In one method, a printed circuit board is provided with semiconductor die. The …