At present efforts in infrared detector research are directed towards improving the
performance of single element devices, large electronically scanned arrays and higher …

Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon
and gallium arsenide and is the material of choice for use in infrared sensing and imaging …

This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …

Infrared Detectors provides comprehensive coverage of this important aspect of infrared
technology, including details of recent research efforts directed toward improving the …

By increasing the quantum well barrier width, we have dramatically reduced the tunneling
dark current by an order of magnitude and thereby significantly increased the blackbody …

The on-chip avalanche photodiodes (APDs) are crucial component of a fully integrated
photonics system. Specifically, III–V compound APD has become one of the main …

HgCdTe, a variable bandgap alloy, discovered in the United Kingdom in 1959,
encompassed wide spectral bands in the infrared (IR) region. At present, it is the most widely …

A theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted
n/sup+/-on-p HgCdTe photodiodes is presented. The model describes the connection …

An analytical approach to analyze the dark current–voltage (I–V) and dynamic impedance vs
reverse bias voltage (Rd–V) characteristics of an HgCdTe junction diode is presented in this …

Investigations of the performance of quantum well infrared photodetectors (QWIPs) as
compared o other types of semiconductor infrared detectors are presented. Two types of …