Cathodoluminescence for the 21st century: Learning more from light
On August 22, 1879, in a lecture to the British Association for the Advancement of Science, 1
Sir William Crookes announced that “radiant matter”(his term for the electrons emerging from …
Sir William Crookes announced that “radiant matter”(his term for the electrons emerging from …
Photo-induced macro/mesoscopic scale ion displacement in mixed-halide perovskites: ring structures and ionic plasma oscillations
Contrary to the common belief that the light-induced halide ion segregation in a mixed
halide alloy occurs within the illuminated area, we find that the Br ions released by light are …
halide alloy occurs within the illuminated area, we find that the Br ions released by light are …
Comparative studies of optoelectrical properties of prominent PV materials: Halide perovskite, CdTe, and GaAs
We compare three representative high performance PV materials: halide perovskite MAPbI
3, CdTe, and GaAs, in terms of photoluminescence (PL) efficiency, PL lineshape, carrier …
3, CdTe, and GaAs, in terms of photoluminescence (PL) efficiency, PL lineshape, carrier …
Quantifying coherent and incoherent cathodoluminescence in semiconductors and metals
We present a method to separate coherent and incoherent contributions to
cathodoluminescence from bulk materials by using angle-resolved cathodoluminescence …
cathodoluminescence from bulk materials by using angle-resolved cathodoluminescence …
Map** the Energy Carrier Diffusion Tensor in Perovskite Semiconductors
Understanding energy transport in semiconductors is critical for the design of electronic and
optoelectronic devices. Semiconductor material properties, such as charge carrier mobility …
optoelectronic devices. Semiconductor material properties, such as charge carrier mobility …
Simultaneous nanoscale excitation and emission map** by cathodoluminescence
T Matsukata, S Ogura, FJ García de Abajo… - ACS …, 2022 - ACS Publications
Free-electron-based spectroscopies can reveal the nanoscale optical properties of
semiconductor materials and nanophotonic devices with a spatial resolution far beyond the …
semiconductor materials and nanophotonic devices with a spatial resolution far beyond the …
GaAs solar cells grown by hydride vapor-phase epitaxy and the development of GaInP cladding layers
The high cost of high-efficiency III-V photovoltaic devices currently limits them to niche
markets. Hydride vapor-phase epitaxy (HVPE) growth of III-V materials recently reemerged …
markets. Hydride vapor-phase epitaxy (HVPE) growth of III-V materials recently reemerged …
Temperature dependence of diffusion length, lifetime and minority electron mobility in GaInP
FJ Schultes, T Christian, R Jones-Albertus… - Applied Physics …, 2013 - pubs.aip.org
The mobility of electrons in double heterostructures of p-type Ga 0.50 In 0.50 P has been
determined by measuring minority carrier diffusion length and lifetime. The minority electron …
determined by measuring minority carrier diffusion length and lifetime. The minority electron …
Integrating electron and near-field optics: dual vision for the nanoworld
NM Haegel - Nanophotonics, 2014 - degruyter.com
The integration of near-field scanning optical microscopy (NSOM) with the imaging and
localized excitation capabilities of electrons in a scanning electron microscope (SEM) offers …
localized excitation capabilities of electrons in a scanning electron microscope (SEM) offers …
Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires
Minority carrier diffusion lengths (L d) are measured for GaN, GaN/AlGaN, and GaN/InGaN
core-shell nanowires using a technique based on imaging of recombination luminescence …
core-shell nanowires using a technique based on imaging of recombination luminescence …