Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
Simply including either single ferroelectric oxide layer or threshold selector, we can make
conventional field effect transistor to have super steep switching characteristic, ie, sub-60 …
conventional field effect transistor to have super steep switching characteristic, ie, sub-60 …
Volatile threshold switching memristor: An emerging enabler in the AIoT era
With rapid advancement and deep integration of artificial intelligence and the internet-of-
things, artificial intelligence of things has emerged as a promising technology changing …
things, artificial intelligence of things has emerged as a promising technology changing …
Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
Power dissipation is a fundamental issue for future chip-based electronics. As promising
channel materials, two-dimensional semiconductors show excellent capabilities of scaling …
channel materials, two-dimensional semiconductors show excellent capabilities of scaling …
All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope
The Boltzmann Tyranny, set by thermionic statistics, dictates the lower limit of switching
slope (SS) of a MOSFET to be 60 mV/dec, the fundamental barrier for low-dissipative …
slope (SS) of a MOSFET to be 60 mV/dec, the fundamental barrier for low-dissipative …
Ultralow-Power Circuit and Sensing Applications Based on Subthermionic Threshold Switching Transistors
The most recent breakthrough in state-of-the-art electronics and optoelectronics involves the
adoption of steep-slope field-effect transistors (FETs), promoting sub-60 mV/dec …
adoption of steep-slope field-effect transistors (FETs), promoting sub-60 mV/dec …
Design and performance assessment of a vertical feedback FET
This paper proposes the structure of a vertical PNPN single gated feedback field-effect
transistor (vertical FBFET) and investigates its performance using a TCAD simulator. The …
transistor (vertical FBFET) and investigates its performance using a TCAD simulator. The …
Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors
A metal ion threshold switch (MITS) based on an Ag/TiN/HfO 2/Pt stack is experimentally
demonstrated with improved endurance. The incorporation of a low-temperature atomic …
demonstrated with improved endurance. The incorporation of a low-temperature atomic …
A generalized workflow for creating machine learning-powered compact models for multi-state devices
The predictive capability of existing physical descriptions of multi-state devices (eg, oxide
memristors, ferroelectrics, antiferroelectric, etc.) cannot be fully leveraged in circuit …
memristors, ferroelectrics, antiferroelectric, etc.) cannot be fully leveraged in circuit …
Nitrogen-induced filament confinement technique for a highly reliable hafnium-based electrochemical metallization threshold switch and its application to flexible logic …
Electrochemical metallization (ECM) threshold switches are in great demand for various
applications such as next-generation logic technology, future memory, and neuromorphic …
applications such as next-generation logic technology, future memory, and neuromorphic …
A leaky integrate-and-fire neuron based on hexagonal boron nitride (h-BN) monocrystalline memristor
As a competitive candidate for artificial neurons, memristors have become the focus of
intense research owing to their intrinsic ion migration tunability, enabling an authentic …
intense research owing to their intrinsic ion migration tunability, enabling an authentic …