Accurate UV light detection is a crucial component in modern optoelectronic technologies.
Current UV photodetectors are mainly based on wide-bandgap semiconductors (WBSs) …

Ga2O3-based solar blind avalanche photodetectors exhibit low voltage operation, optical
filter-free and monolithic integration of photodetector arrays, and therefore they are …

Detection and recognition of latent fingerprints play crucial roles in identification and
security. However, the separation of sensor, memory, and processor in conventional ex-situ …

Photoelectrochemical photocurrent switching (PEPS) effect can regulate the polarity of
photocurrent, which has significant potential applications in areas such as logic gates …

Large-scale growth and heterogeneous integration with existing semiconductors are the
main obstacles to the application of metal halide perovskites in optoelectronics. Herein, a …

Abstract Gallium oxide (Ga2O3), with an ultrawide bandgap, is currently regarded as one of
the most promising materials for solar‐blind photodetectors (SBPDs), which are greatly …

Endowing photodetectors with mechanically flexibility and actual functionality are current
research issues in develo** optoelectronic devices. However, rigid metal‐based or metal …

Abstract 2D materials have garnered significant research attention due to their unique
electrical and optical properties. Various photodetectors (PDs) based on 2D materials have …

Great progress made by heteroepitaxial growth technology encourages rapid development
of III‐nitride heteroepitaxial structures and their applications in extensive fields. Particularly …

High‐quality imaging units are indispensable in modern optoelectronic systems for accurate
recognition and processing of optical information. To fulfill massive and complex imaging …