The key charge transfer processes in electrochemical energy storage devices occur at
electrode–electrolyte interfaces, which are typically buried, making it challenging to access …

Two-dimensional (2D) transition metal dichalcogenides have attracted vibrant interest for
future solid-state device applications due to their unique properties. However, it is …

This work reports the first results on the conjugated hot carrier diffusivity (D) and thermal
conductivity (κ) of suspended nm-thick WS 2 structures. A novel nET-Raman technique is …

We report a novel approach for non-contact simultaneous determination of the hot carrier
diffusion coefficient (D) and interface thermal resistance (R) of sub-10 nm virgin …

Theoretical works suggest the possibility and usefulness of strain engineering of graphene
by predicting remarkable properties, such as Dirac cone merging, bandgap opening and …

Graphene/metal heterojunctions are ubiquitous in graphene-based devices and, therefore,
have attracted increasing interest of researchers. Indeed, the literature on the field reports …

Abstract 2D semiconductors have attracted tremendous attention as an atomically thin
channel for transistors with superior immunity to short‐channel effects. However, with atomic …

A new localized excitonic state is demonstrated in patterned monolayer 2D semiconductors.
The signature of an exciton associated with that state is observed in the photoluminescence …

The currently reported optical-phonon-scattering-limited carrier mobility of MoS2 is up to 417
cm2 V− 1 s− 1 with two-side dielectric screening: one normal-κ side and one high-κ side …

Chemical vapor deposition (CVD) of graphene on top of metallic foils is a technologically
viable method of graphene production. Fabrication of microelectronic devices with CVD …