Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty

D Lanzoni, M Albani, R Bergamaschini… - Physical Review …, 2022 - APS
We use a convolutional, recurrent neural network approach to learn morphological evolution
driven by surface diffusion. To this aim we first produce a training set using phase field …

Near‐Infrared Light Trap** and Avalanche Multiplication in Silicon Epitaxial Microcrystals

V Falcone, A Barzaghi, F Signorelli… - Advanced Optical …, 2024 - Wiley Online Library
The chemical vapor deposition of silicon on a patterned silicon substrate leads to the
formation of 3D microcrystals, which, due to their inclined top facets and high aspect ratio …

[HTML][HTML] Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors

D Ryzhak, AA Corley-Wiciak, P Steglich… - Materials Science in …, 2024 - Elsevier
Here we present the selective epitaxial growth of Ge on Si using reduced pressure chemical
vapor deposition on SiO 2/Si solid masks realized on 200 mm Si wafers, aiming at …

[HTML][HTML] Graphene/Ge microcrystal photodetectors with enhanced infrared responsivity

V Falcone, A Ballabio, A Barzaghi, C Zucchetti, L Anzi… - APL Photonics, 2022 - pubs.aip.org
We report on the electrical and optical properties of microcrystal arrays obtained by
depositing Ge on a deeply patterned Si substrate. Finite difference time domain simulations …

[PDF][PDF] Photodetectors Based on 3D Self-Assembled Ge and Si Micro-Crystals

V Falcone, A Ballabio, A Barzaghi, C Zucchetti, L Anzi… - 2023 - eprints.gla.ac.uk
The direct epitaxial growth of silicon and germanium on silicon (Ge-on-Si) has fostered the
development of visible-near-infrared detectors for telecom and imaging applications [1]. A …

Ge and Si Microcrystal Photodetectors with Enhanced Infrared Responsivity*

V Falcone, A Barzaghi, F Signorelli… - 2023 IEEE …, 2023 - ieeexplore.ieee.org
Ge and Si micro-crystals, grown on Si patterned substrates, can be used as absorbing
elements for photodetection in the near-infrared. In such microstructures, light confinement …

Modeling growth of epitaxial nanostructures by continuum methods and machine learning

F Montalenti - Abstract in atti del convegno, 2023 - boa.unimib.it
Both the typical timescale and sizes involved in epitaxial growth are a major challenge when
attempting to simulate the process at the atomic scale. Therefore, continuum approaches …

Estudo dos efeitos da cinética e das anisotropias interfaciais na solidificação equiaxial utilizando o Modelo do Campo de Fases.

RR Maciel - 2023 - teses.usp.br
Um modelo de campo de fases que considera anisotropias reduzidas ou elevadas da
cinética interfacial (attachment kinetics) e da energia interfacial foi implementado para a …