Abstract Gallium oxide (Ga 2 O 3) is an ultrawide bandgap semiconducting material that has
been developed for many advanced technology and engineering applications and has …

In this work, a systematic photoluminescence (PL) study on three series of gallium
oxide/aluminum gallium oxide films and bulk single crystals is performed including …

In the field of high-power electronics, gallium oxide (Ga 2 O 3) is attracting attention due to
its wide bandgap and ability to be doped n-type. Point defects, including vacancies …

Deep-level defects in β-Ga2O3 that worsen the response speed and dark current (I d) of
photodetectors (PDs) have been a long-standing issue for its application. Herein, an in situ …

Recently, the thin amorphous Ga 2 O 3 nanosheet attracts enormous interest in dielectric
and passivation materials, but it is still lack of the study about its photodetection …

This work explores the luminescence properties of self-trapped holes and impurity-related
acceptors using one-dimensional configuration coordinate diagrams derived from hybrid …

Gallium oxide, and in particular its thermodynamically stable β-Ga 2 O 3 phase, is within the
most exciting materials in research and technology nowadays due to its unique properties …

The β-Ga 2 O 3 films with a top layer do** of nitrogen (N) were prepared by RF magnetron
sputtering. The relationship of parameters (eg nitrogen flow rate and annealing …

Si-doped β-Ga 2 O 3 thin films were prepared on c-plane (001) sapphire substrates by radio
frequency magnetron sputtering, and then annealed at 800° C under Ar atmosphere for 1 h …

The temperature dependence of self-trapped exciton (STE) emission and the optical
absorption edge of monoclinic gallium oxide (β-Ga2O3) has been carefully studied …