Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

[HTML][HTML] Wide bandgap semiconductor-based integrated circuits

S Yuvaraja, V Khandelwal, X Tang, X Li - Chip, 2023 - Elsevier
Wide-bandgap semiconductors exhibit much larger energy bandgaps than traditional
semiconductors such as silicon, rendering them very promising to be applied in the fields of …

[HTML][HTML] Wide band gap devices and their application in power electronics

A Kumar, M Moradpour, M Losito, WT Franke… - Energies, 2022 - mdpi.com
Power electronic systems have a great impact on modern society. Their applications target a
more sustainable future by minimizing the negative impacts of industrialization on the …

Eco‐friendly electronics—a comprehensive review

MP Cenci, T Scarazzato, DD Munchen… - Advanced Materials …, 2022 - Wiley Online Library
Eco‐friendliness is becoming an indispensable feature for electrical and electronic
equipment to thrive in the competitive market. This comprehensive review is the first to …

Recent advances in GaN‐based power HEMT devices

J He, WC Cheng, Q Wang, K Cheng… - Advanced electronic …, 2021 - Wiley Online Library
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

[HTML][HTML] Power electronics revolutionized: A comprehensive analysis of emerging wide and ultrawide bandgap devices

SMSH Rafin, R Ahmed, MA Haque, MK Hossain… - Micromachines, 2023 - mdpi.com
This article provides a comprehensive review of wide and ultrawide bandgap power
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

B Shi, AI Ramones, Y Liu, H Wang, Y Li… - IET Power …, 2023 - Wiley Online Library
Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide
(SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by …

A state-of-the-art review on soft-switching techniques for DC–DC, DC–AC, AC–DC, and AC–AC power converters

SAQ Mohammed, JW Jung - IEEE Transactions on Industrial …, 2021 - ieeexplore.ieee.org
Due to the continuously increasing demand on switched-mode power converters (ie, dc-dc,
dc-ac, ac-dc, and ac-ac) that can achieve high efficiency at high switching frequency, soft …

Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects

A Matallana, E Ibarra, I López, J Andreu… - … and Sustainable Energy …, 2019 - Elsevier
A large number of factors such as the increasingly stringent pollutant emission policies,
fossil fuel scarcity and their price volatility have increased the interest towards the partial or …

The role of power device technology in the electric vehicle powertrain

E Robles, A Matallana, I Aretxabaleta… - … Journal of Energy …, 2022 - Wiley Online Library
In the automotive industry, the design and implementation of power converters and
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …