Hydrophilically activated direct wafer bonding is a technique for gluelessly attaching oxide-
coated wafers together. This ability is a vital step in the construction of many microelectronic …

Wafer bonding techniques, which are very different from epitaxial growth techniques, can be
used not only for the fabrication of micro-electromechanical systems (MEMS), silicon on …

Si-glass bonding is one of the most crucial vacuum packaging methods in semiconductor
devices; however, high temperatures (> 300° C) are required to achieve a high bonding …

Based on a two-step plasma surface activation process (O 2 followed by N 2 plasma), silk
fibroin coating was prepared on Mg-Zn-Ca alloy without conversion layer to retard the …

Lithium niobate (LiNbO 3) crystal has been widely used in integrating optical and acoustic
devices. However, direct bonding of LiNbO 3 to Si-based materials is still a challenge due to …

Microfabricated alkali metal vapor cells are the core components for miniaturizing quantum
devices, such as atomic clocks, atomic gyroscopes, and atomic magnetometers. Alkali …

Homo-and heterogeneous bonding of Cu, SiO 2, and polyimide, by using a single vapor-
assisted surface activation method at 150° C and atmospheric pressure, is highly feasible …

Implantable electrodes with high flexibility, high mechanical fixation and low electrochemical
impedance are desirable for neuromuscular activation because they provide safe, effective …

We demonstrate a facile bonding process for combining silicon and quartz glass wafers by a
two-step wet chemical surface cleaning. After a post-annealing at 200 C, strong bonding …

Ar ion bombardment was conducted to modify the SiC surface microstructures, which had a
vital effect on the interfacial microstructure and shear property of brazing joints. The …