Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …

Today, the introduction of wide band gap (WBG) semiconductors in power electronics has
become mandatory to improve the energy efficiency of devices and modules and to reduce …

Owing to the high carrier density and high electron mobility of the two dimensional electron
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …

We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate
AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p …

This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary
features in the applications of high power and high frequency devices. In this paper, we …

GaN-based transistors with p-GaN gate are commonly accepted as promising devices for
application in power converters, thanks to the positive and stable threshold voltage, the low …

The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …

In this letter, gate leakage mechanisms in different gate contact normally off p-
GaN/AlGaN/GaN high electron mobility transistors (HEMTs) have been studied by the …