Atomic layer deposition (ALD) is a thin-film fabrication technique that has great potential in
nanofabrication. Based on its self-limiting surface reactions, ALD has excellent conformality …

The performance of modern chips is strongly related to the multi-layer interconnect structure
that interfaces the semiconductor layer with the outside world. The resulting demand to …

Current nanopatterning techniques used for integrated circuit fabrication typically rely on a
combination of deposition, lithography, and etch steps. Due to alignment issues …

The structural and electrical properties of Mo thin films with thicknesses between 3 and 50
nm, deposited by physical vapor deposition, have been evaluated in order to assess the …

Interconnect resistance and reliability have emerged as critical factors limiting the
performance of advanced CMOS circuits. With the slowdown of transistor scaling …

This work investigates the role of the co-reactant for the atomic layer deposition of cobalt
(Co) films using cobaltocene (CoCp2) as the precursor. Three different processes were …

For future sub-5 nm technology nodes, the fabrication of semiconductor devices will likely
involve the use of area-selective atomic layer deposition (ALD). While area-selective ALD …

Several issues concerning the applicability of the temperature coefficient of the resistivity
(TCR) method to scaled interconnect lines are discussed. The central approximation of the …

We demonstrate Ru wires with more than 4.6× larger grain sizes, with over 30% reduction in
resistivity at highly scaled wire areas down to 68 nm 2, compared with conventional …

Atomic layer deposition (ALD) of ruthenium is of interest for various applications in
nanoelectronics and is currently gaining attention for its potential role in interconnect …