It has been found that thallium selenide single crystals exhibit bistable or memory switching.
The specimen under test showed threshold switching with critical field of the switching …

A distinctive feature in the development of solid-state electronic devices has been the long
time interval that has usually elapsed between the initial conception of the device, and its …

The theory of MISS, MIST and OMIST devices are modified in order to get better fit with
experimental data. Taking into account the generation current in the surface depletion layer …

The bistable behaviour displayed by the mi-n-p+ switch (designated miss: an acronym for
metal-insulator-silicon switch) can be electrically controlled via a third gate terminal. This …

Abstract Effects of oxide isolation on the two-terminal DC characteristics of metal/tunnel-
oxide/n/p+ silicon switching devices have been studied. Recent experimental results have …

A detailed analysis of the DC switching characteristics of metal-thin insulator-semiconductor-
thin insulator-metal (MISIM) devices is presented. In contrast with conventional junction and …

A systematic experimental study of metal/tunnel-oxide/N/P+(MISS) devices is presented.
Measurements on two-terminal devices suggest that the current-voltage characteristics are …

The optical performance of a logical optical detector, that has been developed from a thin-
oxide MIS silicon switch, is considered in relation to its fabrication. The analysis accounts for …

The excess current experimentally observed in the Metal-Thin SiO 2 layer (n or p) Si (p+ or
n+)(MISS) structures cannot be explained by any of the existing models based on a direct …

The I–V characteristics of the MINPN devices have been studied with the focus on the
physical processes in the switchings. The study consists of computer simulation and …