Radiated EMI evolution of power SiC MOSFET in a boost converter after short-circuit aging tests
Increasing power density, faster switching speed and higher switching frequency force
designers to spend more time both considering the effect of Electromagnetic Interferences …
designers to spend more time both considering the effect of Electromagnetic Interferences …
Simulation of conducted EMI in SiC MOSFET buck converters before and after aging
Because of switching conditions, the SiC MOSFET (Silicon Carbide MOSFET) always
remains a critical device in static converters. Its reliability is still a challenge which requires …
remains a critical device in static converters. Its reliability is still a challenge which requires …
Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests
The electromagnetic compatibility (EMC) study is an indispensable step in the development
cycle of power system modules. In power applications using normally off transistors, short …
cycle of power system modules. In power applications using normally off transistors, short …
Impact of hot carrier injection on switching time evolution for power RF LDMOS after accelerated tests
MA Belaïd - Microelectronics Reliability, 2015 - Elsevier
This paper investigates the effects of hot carrier injection on the switching performance of
power RF LDMOS (Radio Frequency Lateral Diffused Metal–Oxide–Semiconductor) …
power RF LDMOS (Radio Frequency Lateral Diffused Metal–Oxide–Semiconductor) …
Design and layout strategy in the 60-V power PLDMOS with drain-end modulated engineering of reliability considerations
SL Chen, YT Huang - IEEE Transactions on Power Electronics, 2015 - ieeexplore.ieee.org
This study reports the impacts of various drain end layouts on the reliability and electrical
performance of 60V p-channel laterally diffused metal-oxide-semiconductor (pLDMOS) …
performance of 60V p-channel laterally diffused metal-oxide-semiconductor (pLDMOS) …
INSULATED GATE BIPOLAR TRANSISTOR'S AGEING AND ITS IMPACTS ON THE ELECTROMAGNETIC CONDUCTED EMISSIONS
E Dimech - 2022 - etheses.whiterose.ac.uk
Insulated Gate Bipolar Transistors (IGBTs) have become key electronic components in many
applications, including life critical or mission critical products. The understanding of the …
applications, including life critical or mission critical products. The understanding of the …
Drain-side discrete-distributed layout influences on reliability issues in the 0.25 μm 60-V power pLDMOS
SL Chen, YT Huang - … on Power Electronics and ECCE Asia …, 2015 - ieeexplore.ieee.org
Repercussions on the reliability capability and electrical performance of power p-channel
LDMOS devices by different discrete-distributed architectures in the drainside are …
LDMOS devices by different discrete-distributed architectures in the drainside are …
EMI and switching time evolution for power RF LDMOS in chopper application after accelerated tests
This paper deals a correlation of ElectroMagnetic Interference (EMI) evolution with the
switching performance of power RF LDMOS (Radio Frequency Lateral Diffused Metal-Oxide …
switching performance of power RF LDMOS (Radio Frequency Lateral Diffused Metal-Oxide …
Recherche de vulnérabilités des étages de réception aux agressions électromagnétiques de forte puissance: cas d'un LNA AsGa
M Girard - 2018 - theses.hal.science
Ce manuscrit présente une étude de la susceptibilité d'un amplificateur faible bruit (LNA)
AsGa aux agressions électromagnétiques de forte puissance. La notion d' …
AsGa aux agressions électromagnétiques de forte puissance. La notion d' …
Effet du vieillissement par fatigue électrothermique sur la compatibilité électromagnétique des composants de puissance à base de SiC
C Douzi - 2019 - theses.hal.science
Ce travail de recherche porte sur l'étude de l'effet du vieillissement par fatigue
électrothermique sur la compatibilité électromagnétique des composants de puissance à …
électrothermique sur la compatibilité électromagnétique des composants de puissance à …