Charge trap** at oxide defects fundamentally affects the reliability of MOS transistors. In
particular, charge trap** has long been made responsible for random telegraph and 1/f …

This review paper discusses several key issues associated with deep submicron CMOS
devices as well as advanced semiconductor materials in ionizing radiation environments …

An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from
a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear …

The general reduction in the thicknesses of critical dielectric layers driven by Moore's law
scaling has led to increasingly more manageable total-ionizing-dose (TID) response over …

A review of radiation-induced displacement damage effects in semiconductor devices is
presented, with emphasis placed on silicon technology. The history of displacement damage …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …

This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …

Based on the established properties of the most commonly observed defect in amorphous
oxides, the E'center, we suggest a coupled two-stage model to explain the negative bias …

We introduce the time-dependent defect spectroscopy (TDDS) for the analysis of a particular
class of oxide defects known as “border traps.” These defects have a fundamental impact on …