Research to realize long-wavelength, GaInNAs quantum well lasers has been intense in the
past three years. The results have been very promising considering the relative immaturity …

In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …

In two editions spanning more than a decade, The Electrical Engineering Handbook stands
as the definitive reference to the multidisciplinary field of electrical engineering. Our …

Highly mismatched semiconductor alloys such as GaN x As 1− x and GaBi x As 1− x have
several novel electronic properties, including a rapid reduction in energy gap with …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The concept of below-threshold and above-threshold current injection efficiency of quantum
well (QW) lasers is clarified. The analysis presented here is applied to the current injection …

Metalorganic chemical vapor deposition-grown In 0.4 Ga 0.6 As 0.995 N 0.005 quantum well
(QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and …

Growth and properties of GaNAsSb alloys are investigated and compared with those of other
dilute III–N–V alloys. Similar properties are observed including very high bandgap bowing …

InGaAsNSb/GaAs quantum wells (QWs) were grown by solid-source molecular-beam
epitaxy using a N 2 radio frequency plasma source. The effect of adding Sb during growth of …

Optical, electrical, mechanical, and thermal properties of group III nitrides, inclusive of AlN,
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …