Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

Materials with a coexistence of magnetic and ferroelectric order—multiferroics—provide an
efficient route for the control of magnetism by electric fields. The study of multiferroics dates …

Spintronics holds the promise for future information technologies. Devices based on
manipulation of spin are most likely to replace the current silicon complementary metal …

Inducing long‐range magnetic order in 3D topological insulators can gap the Dirac‐like
metallic surface states, leading to exotic new phases such as the quantum anomalous Hall …

Magnetic domain wall (DW)-based logic devices offer numerous opportunities for emerging
electronics applications allowing superior performance characteristics such as fast motion …

The success of oxide electronics depends on the ability to design functional properties such
as ferroelectricity with atomic accuracy. However, despite tremendous advances in …

Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …

Electric field control of magnetism ultimately opens up the possibility of reducing energy
consumption of memory and logic devices. Electric control of magnetization and exchange …

Since the resurgence of multiferroics research, significant advancement has been made in
the theoretical and experimental investigation of the electric field control of magnetization …

The realization that materials with coexisting magnetic and ferroelectric order open up
efficient ways to control magnetism by electric fields unites scientists from different …