Metal oxides possess exceptional potential as base materials in emerging technologies. In
recent times, significant amount of research works is carried out on these materials to assess …

This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

This article reviews the electronic and transport properties of carbon nanotubes. The focus is
mainly theoretical, but when appropriate the relation with experimental results is mentioned …

This paper summarizes some of the essential aspects of silicon‐nanowire growth and of
their electrical properties. In the first part, a brief description of the different growth …

Research on silicon nanowires has developed rapidly in recent years. This can best be
inferred from the sharply increasing number of publications in this field. In 2008, more than …

In this Colloquium the theory of silicon nanowires is reviewed. Nanowires with diameters
below 10 nm are the focus, where quantum effects become important and the properties …

The operation of electronic devices relies on the density of free charge carriers available in
the semiconductor; in most semiconductor devices this density is controlled by the addition …

The solution–liquid–solid (SLS) and related solution-based methods for the synthesis of
semiconductor nanowires and nanorods are reviewed. Since its discovery in 1995, the SLS …

One consequence of the continued downward scaling of transistors is the reliance on only a
few discrete atoms to dope the channel, and random fluctuations in the number of these …

Calculations of the electronic states of donor and acceptor impurities in nanowires show that
the ionization energy of the impurities is strongly enhanced with respect to the bulk, above …