Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of
SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of …

The junctionless transistor consists of a piece of uniformly doped semiconductor with a gate
placed between the source and drain contacts and is, therefore, the simplest transistor …

Building on nearly two decades of reported results for MOSFET's fabricated in small-grain
polycrystalline silicon, a design methodology is developed that yields devices which have …

A physical model considering the effects of grain boundaries on the turn-on behavior of
polysilicon thin-film transistors (poly-Si TFTs) is presented. Along the channel, the formation …

A polycrystalline-silicon thin-film transistor (TFT), with a single grain boundary (GB) present
in the channel, is simulated using two-dimensional numerical simulation, which includes a …

Estimates of the random measurement error contained in surface meteorological
observations from Voluntary Observing Ships (VOS) have been made on a 30° area grid …

The Boltzmann limit of the subthreshold swing 2.3 kT/q in MOSFETs is a widely-
disseminated myth originated from a common amalgam between drain current and mobile …

Electrical characteristics of n-channel fine-grain polycrystalline silicon thin-film transistors
(poly-Si TFTs) fabricated from a sputter-deposited Si film irradiated with laser light have …

A new concept of nanoscale MOSFET, the Gate Modulated Resonant Tunneling Transistor
(RT-FET), is presented and modeled using 3D Non-Equilibrium Green's Function …

An empirical model for the current-voltage characteristics of polycrystalline silicon thin-film
transistors is presented. The model was constructed based on the premise that the potential …