Recent advances in optoelectronic devices based on 2D materials and their heterostructures

J Cheng, C Wang, X Zou, L Liao - Advanced Optical Materials, 2019 - Wiley Online Library
Abstract 2D materials, such as graphene, transition metal dichalcogenides, and black
phosphorus, have become the most potential semiconductor materials in the field of …

2D materials for organic and perovskite photovoltaics

UK Aryal, M Ahmadpour, V Turkovic, HG Rubahn… - Nano Energy, 2022 - Elsevier
The power conversion efficiency of thin film solar cells based on organic and perovskite
materials has improved dramatically in recent years, currently reaching above 18% for …

Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization

L Lv, F Zhuge, F ** in two-dimensional (2D) semiconductors hold essential
promise in realizing customized functional devices in a reconfigurable manner. Here, we …
C Zhou, Y Zhao, S Raju, Y Wang, Z Lin… - Advanced functional …, 2016 - Wiley Online Library
Control of the carrier type in 2D materials is critical for realizing complementary logic
computation. Carrier type control in WSe2 field‐effect transistors (FETs) is presented via …

Recovery improvement for large-area tungsten diselenide gas sensors

KY Ko, K Park, S Lee, Y Kim, WJ Woo… - … applied materials & …, 2018 - ACS Publications
Semiconducting two-dimensional transition-metal dichalcogenides are considered
promising gas-sensing materials because of their large surface-to-volume ratio, excellent …

High-Performance WSe2 Phototransistors with 2D/2D Ohmic Contacts

T Wang, K Andrews, A Bowman, T Hong, M Koehler… - Nano …, 2018 - ACS Publications
We report high-performance WSe2 phototransistors with two-dimensional (2D) contacts
formed between degenerately p-doped WSe2 and undoped WSe2 channel. A …

2D InSe Self‐Powered Schottky Photodetector with the Same Metal in Asymmetric Contacts

J Chen, Z Zhang, J Feng, X **e, A Jian… - Advanced Materials …, 2022 - Wiley Online Library
Self‐powered photodetectors (SPPDs) are generally carried out in multilayered
heterostructures with different semiconductors or in Schottky junctions with different metal …

High open-circuit voltage in transition metal dichalcogenide solar cells

SA Svatek, C Bueno-Blanco, DY Lin, J Kerfoot… - Nano Energy, 2021 - Elsevier
The conversion efficiency of ultra-thin solar cells based on layered materials has been
limited by their open-circuit voltage, which is typically pinned to a value under 0.6 V. Here …

A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures

C Jiang, A Rasmita, H Ma, Q Tan, Z Zhang, Z Huang… - Nature …, 2022 - nature.com
Two-dimensional semiconductors have a valley degree of freedom that could be used as a
platform for future optoelectronic devices. The valley Hall effect, caused by electrons in …

Dual-gate all-electrical valleytronic transistors

S Lai, Z Zhang, N Wang, A Rasmita, Y Deng, Z Liu… - Nano Letters, 2023 - ACS Publications
The development of integrated circuits (ICs) based on a complementary metal–oxide–
semiconductor through transistor scaling has reached the technology bottleneck; thus …