Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Material science and device physics in SiC technology for high-voltage power devices
T Kimoto - Japanese Journal of Applied Physics, 2015 - iopscience.iop.org
Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
[HTML][HTML] Silicon carbide: A unique platform for metal-oxide-semiconductor physics
A sustainable energy future requires power electronics that can enable significantly higher
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …
High-voltage SiC power devices for improved energy efficiency
T Kimoto - Proceedings of the Japan Academy, Series B, 2022 - jstage.jst.go.jp
Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si)
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation
Abstract 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) and
MOS capacitors were fabricated by the following procedures: H 2 etching, SiO 2 deposition …
MOS capacitors were fabricated by the following procedures: H 2 etching, SiO 2 deposition …
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
This paper reviews advanced gate dielectric processes for SiC MOSFETs. The poor quality
of the SiO 2/SiC interface severely limits the value of the channel field-effect mobility …
of the SiO 2/SiC interface severely limits the value of the channel field-effect mobility …
Ion implantation do** in silicon carbide and gallium nitride electronic devices
Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …
excellent materials for the next generation of high-power and high-frequency electronic …
Interface State Density in Atomic Layer Deposited SiO2/ -Ga2O3 ( ) MOSCAPs
K Zeng, Y Jia, U Singisetti - IEEE Electron Device Letters, 2016 - ieeexplore.ieee.org
The interface state density (D it) at the interface between β-Ga 2 O 3 (2̅01) and atomic layer
deposited (ALD) SiO 2 dielectric is extracted using Terman method and conductance …
deposited (ALD) SiO 2 dielectric is extracted using Terman method and conductance …
Comparison of commercial planar and trench SiC MOSFETs by electrical characterization of performance-degrading near-interface traps
The suboptimal performance and low channel-carrier mobility of silicon carbide (SiC) power
MOSFETs are attributed to a high density of oxide traps near the 4H-SiC/SiO2 interface. In …
MOSFETs are attributed to a high density of oxide traps near the 4H-SiC/SiO2 interface. In …