The future of memristors: Materials engineering and neural networks

K Sun, J Chen, X Yan - Advanced Functional Materials, 2021 - Wiley Online Library
Abstract From Deep Blue to AlphaGo, artificial intelligence and machine learning are
booming, and neural networks have become the hot research direction. However, due to the …

An overview: Facet-dependent metal oxide semiconductor gas sensors

X Gao, T Zhang - Sensors and Actuators B: Chemical, 2018 - Elsevier
Metal oxide semiconductor (MOS) gas sensors possess extensive applications due to their
high sensitivity, low cost, and simplicity. To boost their excellent sensing performance and …

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F Pan, S Gao, C Chen, C Song, F Zeng - Materials Science and …, 2014 - Elsevier
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances

W Hu, N Qin, G Wu, Y Lin, S Li… - Journal of the American …, 2012 - ACS Publications
The opportunity of spinel ferrites in nonvolatile memory device applications has been
demonstrated by the resistive switching performance characteristics of a Pt/NiFe2O4/Pt …

Conductance quantization in resistive random access memory

Y Li, S Long, Y Liu, C Hu, J Teng, Q Liu, H Lv… - Nanoscale research …, 2015 - Springer
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure,
excellent performances, and complementary metal-oxide-semiconductor (CMOS) …

Monitoring oxygen movement by Raman spectroscopy of resistive random access memory with a graphene-inserted electrode

H Tian, HY Chen, B Gao, S Yu, J Liang, Y Yang… - Nano …, 2013 - ACS Publications
In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the
electrode/oxide interface by inserting single-layer graphene (SLG). Raman area map** …

Metal nanoparticles layer boosted resistive switching property in NiFe2O4-based memory devices

S Wang, X Ning, A Hao, R Chen - Journal of Alloys and Compounds, 2022 - Elsevier
Metal nanoparticles layer (Ag and Cu) derived NiFe 2 O 4 thin films have been synthesized
on Pt/Ti/SiO 2/Si substrates via a facile chemical solution deposition approach. The …

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

RC Fang, QQ Sun, P Zhou, W Yang, PF Wang… - Nanoscale research …, 2013 - Springer
We demonstrated a flexible resistive random access memory device through a low-
temperature atomic layer deposition process. The device is composed of an HfO 2/Al 2 O 3 …

Biomedical applications of sensing devices with memristive behaviors

Y Yang, B Sun, SS Mao, J Qin, Y Yang, M Liu… - Journal of Materials …, 2024 - pubs.rsc.org
Health monitoring and disease diagnosis currently face various challenges and
opportunities with the continuous innovation and progress of technology, which has further …

Nickel oxide/graphene composites: synthesis and applications

Y Liu, C Gao, Q Li, H Pang - Chemistry–A European Journal, 2019 - Wiley Online Library
Nickel oxide (NiO) has emerged as one of the most promising transition‐metal oxides
(TMOs) for electrochemical capacitors, batteries, catalysis, and electrochromic films, owing …