Chemical vapour deposition of zeolitic imidazolate framework thin films
Integrating metal–organic frameworks (MOFs) in microelectronics has disruptive potential
because of the unique properties of these microporous crystalline materials. Suitable film …
because of the unique properties of these microporous crystalline materials. Suitable film …
Research progress of electroplated nanotwinned copper in microelectronic packaging
KX Chen, LY Gao, Z Li, R Sun, ZQ Liu - Materials, 2023 - mdpi.com
Copper is the most common interconnecting material in the field of microelectronic
packaging, which is widely used in advanced electronic packaging technologies. However …
packaging, which is widely used in advanced electronic packaging technologies. However …
Low-temperature synthesis of graphene by chemical vapor deposition and its applications
Graphene is currently one of the most advanced materials under study for the development
of a wide range of future device applications, owing to fascinating properties such as high …
of a wide range of future device applications, owing to fascinating properties such as high …
Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
The performance of modern chips is strongly related to the multi-layer interconnect structure
that interfaces the semiconductor layer with the outside world. The resulting demand to …
that interfaces the semiconductor layer with the outside world. The resulting demand to …
Properties of ultrathin molybdenum films for interconnect applications
V Founta, JP Soulié, K Sankaran, K Vanstreels… - Materialia, 2022 - Elsevier
The structural and electrical properties of Mo thin films with thicknesses between 3 and 50
nm, deposited by physical vapor deposition, have been evaluated in order to assess the …
nm, deposited by physical vapor deposition, have been evaluated in order to assess the …
Ab initio screening of metallic MAX ceramics for advanced interconnect applications
The potential of a wide range of layered ternary carbide and nitride Mn+ 1AXn [an early
transition metal (M), an element of columns 13 or 14 of the periodic table (A), and either C or …
transition metal (M), an element of columns 13 or 14 of the periodic table (A), and either C or …
Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models
MR Baklanov, V Jousseaume, TV Rakhimova… - Applied Physics …, 2019 - pubs.aip.org
This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …
advanced interconnect technology. UV light application in BEOL historically was mainly …
Al3Sc thin films for advanced interconnect applications
JP Soulié, K Sankaran, V Founta, K Opsomer… - Microelectronic …, 2024 - Elsevier
Al x Sc 1-x thin films have been studied with compositions around Al 3 Sc (x= 0.75) for
potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray …
potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray …
Benzene bridged hybrid organosilicate films with improved stiffness and small pore size
Critical properties of porous periodic mesoporous silica (PMO) low-k dielectric with a
different ratio of benzene bridges and methyl terminal groups are studied by using various …
different ratio of benzene bridges and methyl terminal groups are studied by using various …
Review on modeling and application of chemical mechanical polishing
G Zhao, Z Wei, W Wang, D Feng, A Xu… - Nanotechnology …, 2020 - degruyter.com
With the development of integrated circuit technology, especially after entering the sub-
micron process, the reduction of critical dimensions and the realization of high-density …
micron process, the reduction of critical dimensions and the realization of high-density …