Single-event upset responses of dual-and triple-well D flip-flop designs in 7-nm bulk FinFET...

Single-Event Upsets Due to n-Hits and p-Hits at the 3nm Bulk FinFET Node

JB Kronenberg, NJ Pieper, Y **ong… - … on Nuclear Science, 2025 - ieeexplore.ieee.org
Differences in the physical structure of semiconductor regions under NMOS and PMOS
transistors lead to different levels of charge collection due to incident ions. In this work, ions …
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Effect of cell placement on single-event transient pulse in a bulk finfet technology

P Huang, Z Zhao, Y Chi, B Liang, C Ma… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
In this article, five different cell placement structures of a vertical inverter chain were
designed in a commercial bulk FinFET technology to investigate the effect of cell placement …
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