Genetic algorithms, a nature-inspired tool: survey of applications in materials science and related fields
W Paszkowicz - Materials and Manufacturing Processes, 2009 - Taylor & Francis
Genetic algorithms (GAs) are a tool used to solve high-complexity computational problems.
Apart from modelling the phenomena occurring in Nature, they help in optimization …
Apart from modelling the phenomena occurring in Nature, they help in optimization …
Precise determination of crystal lattice parameters
VV Lider - Physics-Uspekhi, 2020 - iopscience.iop.org
Precision X-ray methods for absolute and relative determination of crystal lattice parameters
(interplanar distances) are described and compared, including the X-ray divergent-beam …
(interplanar distances) are described and compared, including the X-ray divergent-beam …
[PDF][PDF] Treatment of multiple-beam X-ray diffraction in energy-dependent measurements
M Nentwich, M Zschornak, T Weigel… - Journal of …, 2024 - journals.iucr.org
During X-ray diffraction experiments on single crystals, the diffracted beam intensities may
be affected by multiple-beam X-ray diffraction (MBD). This effect is particularly frequent at …
be affected by multiple-beam X-ray diffraction (MBD). This effect is particularly frequent at …
[PDF][PDF] X-ray dynamical diffraction in amino acid crystals: a step towards improving structural resolution of biological molecules via physical phase measurements
SL Morelhao, CMR Remédios… - Journal of applied …, 2017 - journals.iucr.org
In this work, experimental and data analysis procedures were developed and applied for
studying amino acid crystals by means of X-ray phase measurements. The results clearly …
studying amino acid crystals by means of X-ray phase measurements. The results clearly …
Absolute refinement of crystal structures by X-ray phase measurements
SL Morelhao, ZG Amirkhanyan… - … Section A: Foundations …, 2015 - journals.iucr.org
A pair of enantiomer crystals is used to demonstrate how X-ray phase measurements
provide reliable information for absolute identification and improvement of atomic model …
provide reliable information for absolute identification and improvement of atomic model …
Изучение дефектной структуры эпитаксиальных слоев GaN на основе анализа пиков трехволновой дифракции рентгеновских лучей
РН Кютт - Письма в Журнал технической физики, 2010 - elibrary.ru
Проведены измерения многоволновой дифракции рентгеновских лучей в
эпитаксиальных пленках GaN с разной плотностью дислокаций. Использовалась схема …
эпитаксиальных пленках GaN с разной плотностью дислокаций. Использовалась схема …
Role of filler lanthanide ions on lattice dynamics of phosphide skutterudites RFeP (R = La, Ce, and Pr) from first principles
RFS Penacchio, N Burns, MB Estradiote… - ar** and band gap …
Growth and cap** of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction
An x-ray diffraction method, based on the excitation of a surface diffracted wave, is described
to investigate the cap** process of InAs/GaAs (001) quantum dots (QDs). It is sensitive to …
to investigate the cap** process of InAs/GaAs (001) quantum dots (QDs). It is sensitive to …
[PDF][PDF] Three-wave X-ray diffraction in distorted epitaxial structures
R Kyutt, M Scheglov - Journal of Applied Crystallography, 2013 - journals.iucr.org
Three-wave diffraction has been measured for a set of GaN, AlN, AlGaN and ZnO epitaxial
layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was …
layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was …
[PDF][PDF] Трехволновая дифракция в нарушенных эпитаксиальных слоях с вюрцитной структурой
РН Кютт - Журнал технической физики, 2011 - journals.ioffe.ru
Проведены экспериментальные измерения трехволновой дифракции рентгеновских
лучей по схеме Реннингера для серии эпитаксиальных слоев GaN различной толщины …
лучей по схеме Реннингера для серии эпитаксиальных слоев GaN различной толщины …