Deep-level defects in gallium oxide
As an ultrawide bandgap semiconductor, gallium oxide (Ga 2 O 3) has superior physical
properties and has been an emerging candidate in the applications of power electronics and …
properties and has been an emerging candidate in the applications of power electronics and …
[HTML][HTML] Iron and intrinsic deep level states in Ga2O3
Using a combination of deep level transient spectroscopy, secondary ion mass
spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar …
spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar …
Electron–phonon coupling from finite differences
B Monserrat - Journal of Physics: Condensed Matter, 2018 - iopscience.iop.org
The interaction between electrons and phonons underlies multiple phenomena in physics,
chemistry, and materials science. Examples include superconductivity, electronic transport …
chemistry, and materials science. Examples include superconductivity, electronic transport …
Defect tolerance in halide perovskites: A first-principles perspective
In recent years, the impressive photovoltaic performance of halide perovskites has been
commonly attributed to their defect tolerance. This attribution is seemingly intuitive and has …
commonly attributed to their defect tolerance. This attribution is seemingly intuitive and has …
[HTML][HTML] Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance
A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
A first-principles understanding of point defects and impurities in GaN
Attaining control over the electrical conductivity of gallium nitride through impurity do** is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …
Nonrad: Computing nonradiative capture coefficients from first principles
Point defects in semiconductor crystals provide a means for carriers to recombine
nonradiatively. This recombination process impacts the performance of devices. We present …
nonradiatively. This recombination process impacts the performance of devices. We present …
[HTML][HTML] GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for
solid-state lighting. They exhibit impressive figures of merit like an internal quantum …
solid-state lighting. They exhibit impressive figures of merit like an internal quantum …
Quantum embedding methods for correlated excited states of point defects: Case studies and challenges
A quantitative description of the excited electronic states of point defects and impurities is
crucial for understanding materials properties, and possible applications of defects in …
crucial for understanding materials properties, and possible applications of defects in …
Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3
The electrical properties of epitaxial β-Ga 2 O 3 doped with Sn (10 16–9× 10 18 cm− 3) and
grown by metalorganic chemical vapor deposition on semi-insulating β-Ga 2 O 3 substrates …
grown by metalorganic chemical vapor deposition on semi-insulating β-Ga 2 O 3 substrates …