Ultra-wide bandgap semiconductors, with bandgaps greater than 3.5 eV, have immense
potential in power-switching electronic applications and ultraviolet light emitters. But the …

As an ultrawide bandgap semiconductor, gallium oxide (Ga 2 O 3) has superior physical
properties and has been an emerging candidate in the applications of power electronics and …

Using a combination of deep level transient spectroscopy, secondary ion mass
spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar …

A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …

Attaining control over the electrical conductivity of gallium nitride through impurity do** is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …

In recent years, the impressive photovoltaic performance of halide perovskites has been
commonly attributed to their defect tolerance. This attribution is seemingly intuitive and has …

Point defects in semiconductor crystals provide a means for carriers to recombine
nonradiatively. This recombination process impacts the performance of devices. We present …

Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for
solid-state lighting. They exhibit impressive figures of merit like an internal quantum …

A quantitative description of the excited electronic states of point defects and impurities is
crucial for understanding materials properties, and possible applications of defects in …

The electrical properties of epitaxial β-Ga 2 O 3 doped with Sn (10 16–9× 10 18 cm− 3) and
grown by metalorganic chemical vapor deposition on semi-insulating β-Ga 2 O 3 substrates …