After two decades of intensive development, 3-D integration has proven invaluable for
allowing integrated circuits to adhere to Moore's Law without needing to continuously shrink …

The increasing demand for precise neuromodulation necessitates advancements in
techniques to achieve higher spatial resolution. Magnetic stimulation, offering low signal …

Three-dimensional ICs provide a promising option to build high-performance compact SoCs
by stacking one or more chips vertically. Through silicon vias (TSVs) form an integral …

This paper introduces the first comprehensive and accurate compact resistance-inductance-
capacitance-conductance (RLCG) model for through-silicon vias (TSVs) in 3-D ICs valid …

Closed-form expressions of the resistance, capacitance, and inductance for interplane 3-D
vias are presented in this paper. The closed-form expressions account for the 3-D via length …

This paper presents analytical modeling and 3D full-wave electromagnetic (EM) simulation
of the bias voltage dependent semiconductor (MOS) capacitance of a Through Silicon Via …

3-D integration of microelectronic systems reduces the interconnect length, wiring delay, and
system size, while enhancing functionality by heterogeneous integration. Through silicon via …

2010-07-07 Assigned to NANONEXUS (ASSIGNMENT FOR THE BENEFIT OF
CREDITORS), LLC reassignment NANONEXUS (ASSIGNMENT FOR THE BENEFIT OF …

An improved interconnection system is described. Such as for electrical contactors and
connectors, electronic device or module package assemblies, socket assemblies, and/or …

Through-silicon via (TSV) constitutes a key component interconnecting adjacent dies
vertically to form 3-D integrated circuits. In this letter, we propose a method to exploit the TSV …