Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent do** variation by quartz-free hydride vapor phase …
H Fujikura, T Konno, T Kimura, Y Narita… - Applied Physics …, 2020 - pubs.aip.org
Certain undesired phenomena are observed in n-GaN layers grown by metal–organic
chemical vapor deposition (MOCVD) due to the unavoidable C-induced carrier …
chemical vapor deposition (MOCVD) due to the unavoidable C-induced carrier …
Impact of solar irradiance intensity and temperature on the performance of compensated crystalline silicon solar cells
C **ao, X Yu, D Yang, D Que - Solar Energy Materials and Solar Cells, 2014 - Elsevier
Low-cost upgraded metallurgical grade silicon (UMG-Si) with inherent boron (B) and
phosphorus (P) compensation is a novel material for photovoltaic application. This paper …
phosphorus (P) compensation is a novel material for photovoltaic application. This paper …
PC1Dmod 6.2–Improved simulation of c-Si devices with updates on device physics and user interface
In this paper we present a new update to PC1Dmod, which extends the original PC1D
program by implementing Fermi-Dirac statistics and a range of state-of-the-art models in …
program by implementing Fermi-Dirac statistics and a range of state-of-the-art models in …
UMG silicon for solar PV: From defects detection to PV module degradation
Upgraded metallurgical grade silicon (UMG-Si) for photovoltaic (PV) solar applications has
been manufactured through the metallurgical route by means of the process developed by …
been manufactured through the metallurgical route by means of the process developed by …
Towards a unified low-field model for carrier mobilities in crystalline silicon
The electrical properties of crystalline silicon crucially depend on the mobility of minority and
majority charge carriers. As parameters like the conductivity and the diffusion length are …
majority charge carriers. As parameters like the conductivity and the diffusion length are …
Determination of bulk lifetime and surface recombination velocity of silicon ingots from dynamic photoluminescence
This paper elaborates upon the theory of self-consistent minority carrier bulk lifetime
measurements of silicon ingots via time-modulated photoluminescence and presents an …
measurements of silicon ingots via time-modulated photoluminescence and presents an …
Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells
M Forster, P Wagner, J Degoulange, R Einhaus… - Solar energy materials …, 2014 - Elsevier
This paper deals with the impact of dopant compensation on the degradation of carrier
lifetime and solar cells performance due to the boron–oxygen defect. The boron–oxygen …
lifetime and solar cells performance due to the boron–oxygen defect. The boron–oxygen …
Accurate determination of minority carrier mobility in silicon from quasi-steady-state photoluminescence
JA Giesecke, F Schindler, M Bühler… - Journal of Applied …, 2013 - pubs.aip.org
Minority carrier mobility is a crucial transport property affecting the performance of
semiconductor devices such as solar cells. Compensation of dopant species and novel …
semiconductor devices such as solar cells. Compensation of dopant species and novel …
Temperature coefficients and crystal defects in multicrystalline silicon solar cells
ST Kristensen - 2020 - uia.brage.unit.no
The conversion efficiency of a photovoltaic device is strongly dependent on the operating
temperature. For most devices, the efficiency, and hence the power production, decreases …
temperature. For most devices, the efficiency, and hence the power production, decreases …
Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature
In this work, the device performances of discrete and integrated SiGe heterojunction bipolar
transistors (HBTs) with different device structures from 300 to 4.8 K were investigated. The …
transistors (HBTs) with different device structures from 300 to 4.8 K were investigated. The …