Voltage-gate-assisted spin-orbit-torque magnetic random-access memory for high-density and low-power embedded applications
The voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the
advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) …
advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) …
Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB| MgO interface
We studied the impact of different insertion layers (Ta, Pt, and Mg) at the CoFeB| MgO
interface on voltage-controlled magnetic anisotropy (VCMA) effect and other magnetic …
interface on voltage-controlled magnetic anisotropy (VCMA) effect and other magnetic …
Voltage-gated spin-orbit torque switching in IrMn-based perpendicular magnetic tunnel junctions
In this work, IrMn-based perpendicular magnetic tunnel junctions (MTJs) are investigated. By
inserting a thin W layer at an antiferromagnet/ferromagnet (AFM/FM) interface, we enhance …
inserting a thin W layer at an antiferromagnet/ferromagnet (AFM/FM) interface, we enhance …
Voltage-controlled magnetoelectric memory and logic devices
Harnessing the nonvolatility of magnetism and the power of electric control, magnetoelectric
devices that control magnetism electrically promise to deliver next-generation electronics …
devices that control magnetism electrically promise to deliver next-generation electronics …
Enhancement in the interfacial perpendicular magnetic anisotropy and the voltage-controlled magnetic anisotropy by heavy metal do** at the Fe/MgO interface
We investigated the influence of heavy metal do** at the Fe/MgO interface on the
interfacial perpendicular magnetic anisotropy (PMA) and the voltage-controlled magnetic …
interfacial perpendicular magnetic anisotropy (PMA) and the voltage-controlled magnetic …
Reduction in write error rate of voltage-driven dynamic magnetization switching by improving thermal stability factor
In this study, we demonstrate voltage-driven dynamic magnetization switching for the write
error rate (WER) of the order of 10− 5. The largest voltage effect on the perpendicular …
error rate (WER) of the order of 10− 5. The largest voltage effect on the perpendicular …
Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo| CoFeB| MgO structures
We study voltage-controlled magnetic anisotropy (VCMA) and other magnetic properties in
annealed Mo| CoFeB| MgO layered structures. The interfacial perpendicular magnetic …
annealed Mo| CoFeB| MgO layered structures. The interfacial perpendicular magnetic …
[HTML][HTML] Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions
The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular
magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that …
magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that …
Thickness-Dependent Perpendicular Magnetic Anisotropy and Gilbert Dam** in Heterostructures
Hf/Co 20 Fe 60 B 20/Mg O is an attractive alternative free-layer structure for the realization of
high-thermal-stability magnetoresistance random access memory (MRAM) because of its …
high-thermal-stability magnetoresistance random access memory (MRAM) because of its …
Voltage-controlled magnetic anisotropy in Fe| MgO tunnel junctions studied by x-ray absorption spectroscopy
In this study, voltage-controlled magnetic anisotropy (VCMA) in Fe| MgO tunnel junctions
was investigated via the magneto-optical Kerr effect, soft x-ray absorption spectroscopy, and …
was investigated via the magneto-optical Kerr effect, soft x-ray absorption spectroscopy, and …