Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …

Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device
applications owing to its excellent material properties. In this paper, we present a …

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …

In this work, metalorganic chemical vapor deposition (MOCVD) of (010) β-Ga2O3 with fast
growth rates was investigated using trimethylgallium (TMGa) as the gallium (Ga) precursor …

In this letter, fin-shape tri-gate-Ga2O3 lateral MESFETs are demonstrated with a high power
figure of merit (PFOM) of 0.95 GW/cm2–a record high for any-Ga2O3 transistor to date. A low …

Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer
layers | APL Materials | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt …

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a
growth rate of∼ 1 µm/h with control of the silicon do** concentration from 5× 1016 to 1019 …

We report on the growth of monoclinic β-and orthorhombic κ-phase Ga 2 O 3 thin films using
liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H …

In this Letter, in situ Mg do** in β-Ga 2 O 3 was demonstrated via metalorganic chemical
vapor deposition (MOCVD) epitaxy. The electrical insulating property of the Mg acceptors in …

Heteroepitaxy of β-phase gallium oxide (β-Ga2O3) thin films on foreign substrates shows
promise for the development of next-generation deep ultraviolet solar blind photodetectors …