The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …

Semiconductor spin qubits offer the potential to employ industrial transistor technology to
produce large-scale quantum computers. Silicon hole spin qubits benefit from fast all …

The encoding of qubits in semiconductor spin carriers has been recognized as a promising
approach to a commercial quantum computer that can be lithographically produced and …

Abstract This Technical Review collects values of selected performance characteristics of
semiconductor spin qubits defined in electrically controlled nanostructures. The …

Large-scale superconducting quantum computers require the high-fidelity control and
readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input …

Many important phenomena in quantum devices are dynamic, meaning that they cannot be
studied using time-averaged measurements alone. Experiments that measure such transient …

Semiconductor spin qubits based on spin–orbit states are responsive to electric field
excitations, allowing for practical, fast and potentially scalable qubit control. Spin electric …

The coherent control of interacting spins in semiconductor quantum dots is of strong interest
for quantum information processing and for studying quantum magnetism from the bottom …

In the contemporary era of scientific and technical innovations, we are witnessing
remarkable progress in the realm of quantum computing. Today's phase is referred to as the …