An alternative approach is proposed to improve the conventional (based on the low‐
temperature grown GaAs and Si‐doped GaAs superlattice) photoconductive antenna (PCA) …

The effect of epitaxial stresses on the excess-carrier dynamics and the terahertz radiation
spectrum of the In y Ga 1–y As films have been investigated by optical pump-probe and …

We report on the time-resolved measurements of photocarrier dynamics in InGaAs/InAlAs
superlattices with epitaxial stresses in a wide range of optical pump fluences. We …

The influence of excitation photons energy on the relaxation times of photoexcited carriers is
studied. The involved relaxation mechanisms are evaluated and the reflection coefficient of …

Исследовано влияние энергии фотонов возбуждения на времена релаксации
фотовозбужденных носителей заряда. Проведены оценка возникающих механизмов …

The results of studying semiconductor structures proposed for the first time and grown, which
combine the properties of LT-GaAs with p-type conductivity upon do** with Si, are …

Методами оптического зондирования при фемтосекундной лазерной накачке (optical
pump-probe) и терагерцевой спектроскопии во временно́й области исследовано …

Представлены результаты исследования впервые предложенных и выращенных
полупроводниковых структур, сочетающих свойства LT-GaAs и $ p $-тип проводимости …

Gallium arsenide (GaAs) implanted with silicon forming intersubband of SiGaAs is a
promising material for making novel electronic and optoelectronic devices. This paper is …