Dead time optimization in a GaN-based buck converter

M Asad, AK Singha, RMS Rao - IEEE Transactions on Power …, 2021 - ieeexplore.ieee.org
A gallium nitride (GaN) field effect transistor can provide superior performance over a Si-
mosfet due to its low on-state resistance and low junction capacitances. However, a GaN …

Modeling, simulation, and characterization of a supercapacitor in automotive applications

V Castiglia, N Campagna… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
In the energy storage field, supercapacitors (SCs) are gaining more and more attention
thanks to features, such as high-power density, high life cycles, and lack of maintenance. In …

[HTML][HTML] Review of Fast Computation Methods for Finite-State Predictive Control of Multi-Phase Drives

E Marsal, MR Arahal, MG Satué, M Perales - Applied Sciences, 2024 - mdpi.com
Optimizing the cost function in predictive control of multi-phase drives is computationally
intensive. This poses a challenge since the required sampling period for drives falls within …

A wide bandwidth GaN switching power amplifier of active magnetic bearing for a flywheel energy storage system

HJ Hu, K Liu, H Wang, JB Wei - IEEE Transactions on Power …, 2022 - ieeexplore.ieee.org
A switching power amplifier (SPA) provides the driving current for an active magnetic
bearing (AMB) to achieve magnetic suspension (MS) control. The performances of the …

A 9.2-ns to 1-s digitally controlled multituned deadtime optimization for efficient GaN HEMT power converters

M Karimi, M Ali, A Aghajani, A Hassan… - … on Circuits and …, 2022 - ieeexplore.ieee.org
This paper presents a tunable new deadtime control circuit providing an optimal delay for
power converter optimization. Our method can reduce the deadtime loss while improving the …

Optimal dead-time setting and loss analysis for GaN-based voltage source converter

P Williford, EA Jones, Z Yang, J Chen… - 2018 IEEE Energy …, 2018 - ieeexplore.ieee.org
The dead-time in voltage source converters can have significant impact on power quality
and efficiency, and because these losses scale proportionally with switching frequency, it is …

Comparison of the Effects of Nonlinearities for Si MOSFET and GaN E-HEMT based VSIs

H Yuruk, O Keysan, B Ulutas - IEEE Transactions on Industrial …, 2020 - ieeexplore.ieee.org
Nonlinearities in voltage source inverters (VSIs) such as; dead time, switching time, delay
time, voltage drops on the power switches, parasitic capacitance, etc., are considered to be …

A hybrid storage system for wireless sensor nodes powered with energy harvesting

F Pellitteri, P Livreri, L Schirone… - … Conference on Clean …, 2019 - ieeexplore.ieee.org
With the recent development of Internet of Things (IoT) and Wireless Sensor Networks
(WSN), research and industry have been increasingly focusing on the opportumty of …

Dead-time Evaluation with Switching frequency for GaN-based Non-inverting Buck-Boost DC-DC Converter using FPGA-based High-frequency Control

RN Tripathi - IEEE Journal of Emerging and Selected Topics in …, 2023 - ieeexplore.ieee.org
The distinctive characteristics, such as fast switching and higher power density of gallium
nitride (GaN) power semiconductor devices, are fascinating for power electronic …

Tracking deadtime Algorithm for GaN DC/DC converter

P Skarolek, J Lettl - 2019 International Conference on Applied …, 2019 - ieeexplore.ieee.org
The presented method automatically adjusts the deadtime of gallium nitride (GaN)
transistors in half-bridge to increase the efficiency. This removes the need of manual …