In this paper, the advantages of GaN high electron mobility transistors (HEMTs) grown on
native GaN over GaN/Si or GaN/sapphire substrates are investigated and correlated with …

The scanning capacitance microscope (SCM) is a powerful tool to characterise local
electrical properties in GaN-based high electron mobility transistor (HEMT) structures with …

The existence of a correlation between current collapse and off-state reverse-bias leakage
current in heteroepitaxially grown AlGaN/GaN high-electron-mobility transistors is …

In this paper, an improved modeling approach has been developed and validated for GaN
high electron mobility transistors (HEMTs). The proposed analytical model accurately …

AlGaN/GaN high electron mobility transistors (HEMTs) heterostructures are grown by metal-
organic chemical vapor deposition on silicon-on-insulator (SOI) substrate and high-resistivity …

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode
(SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility …

The ohmic properties of Ti/Al/Mo/Au contacts on a high-quality AlGaN/GaN heterostructure
epitaxially grown on a GaN substrate were investigated. Systematic structural and electrical …

Long-term operation of chemical sensors under dynamic pressure/temperature conditions
for industrial or environmental monitoring is desirable and yet rarely achieved. We have …

Techniques are provided that pum** of deep traps in GaN electronic devices using
photons from an on-chip photon source. In various embodiments, a method for optical pump …

The breakdown mechanism in a high-electron mobility transistor structure on free-standing n-
type GaN substrates consisting of a C-doped GaN layer as a high-resistivity buffer was …