In the automotive industry, the design and implementation of power converters and
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …

The next-generation (5G/6G) wireless communication aims to leapfrog the currently
occupied sub-6 GHz spectrum to the wideband millimeter-wave (MMW) spectrum. However …

The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role
in various applications such as adapters, uninterrupted power supplies, smart grids, and …

The output capacitance () loss, a loss produced when the device's output capacitor is
charged and discharged, has become a concern for GaN high electron mobility transistors …

GaN-based light-emitting diodes (LEDs) have attracted widespread attention owing to their
advantages of high efficiency and brightness, stable emission and full color emission …

In this work, gallium nitride (GaN) thin film was deposited on porous silicon (PSi) substrate
via a pulsed laser deposition route with a 355 nm laser wavelength, 900 mJ of laser energy …

Interface phonon modes that are generated by several atomic layers at the heterointerface
play a major role in the interface thermal conductance for nanoscale high-power devices …

GaN technology is on the advance for the use in power ICs thanks to space-saving
integrated circuit components and the increasing number of integrated devices. This work …

This paper presents a comprehensive review on the employment of wide bandgap (WBG)
semiconductor power devices in wind energy conversion systems (WECSs). Silicon-carbide …

This work presents a tri-gate GaN junction high-electron-mobility transistor (JHEMT) concept
in which the p–n junction wraps around the AlGaN/GaN fins in the gate region. This tri-gate …